Transistors IC SMD Type Type SMD Product specification 2SK2329S TO-252 Features Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65-0.1 Suitable for Switching regulator, DC-DC converter +0.28 1.50-0.1 +0.2 9.70-0.2 2.5 V gate drive device can be driven from 3 V source +0.15 0.50-0.15 Low drive current 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 30 Gate to source voltage VGSS 10 10 ID Drain current Unit V V A Idp * 40 A Power dissipation PD 20 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain to source breakdown voltage VDSS ID=10mA,VGS=0 Gate to source voltage VGSS IG= 200 A,VGS=0 Drain cut-off current IDSS VDS=25V,VGS=0 Gate leakage current IGSS VGS= 6.5V,VDS=0 Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance VGS(off) VDS=10V,ID=1mA Yfs RDS(on) VDS=10V,ID=5A VGS=4V,ID=5A VGS=2.5V,ID=5A Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time tr Turn-off delay time toff Fall time tf http://www.twtysemi.com Min Typ Max 30 V 10 V 0.4 10 Unit 100 A 10 A 1.4 18 V S 0.03 0.04 0.04 0.06 1250 pF 540 pF Crss 120 pF ton 20 ns 145 ns VDS=10V,VGS=0,f=1MHZ ID=5A,VGS(on)=4V,RL=2 [email protected] 225 ns 125 ns 4008-318-123 1 of 1