IC Transistors MOSFET SMD Type Product specification 2SK3365 TO-252 MAX. (VGS = 4 V, ID = 15A) Low Ciss: Ciss = 1300 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.8 0.50-0.7 3.80 RDS(on)3 = 29m Unit: mm +0.1 2.30-0.1 +0.15 5.55-0.15 MAX. (VGS = 4.5 V, ID = 15A) +0.15 1.50-0.15 RDS(on)2 = 21m +0.15 0.50-0.15 MAX. (VGS = 10 V, ID = 15 A) +0.2 9.70-0.2 RDS(on)1 = 14 m +0.15 6.50-0.15 +0.2 5.30-0.2 0.127 max +0.25 2.65-0.1 Super low on-state resistance: +0.28 1.50-0.1 Features 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 30 V Gate to source voltage VGSS Drain current Power dissipation TA=25 20 V ID 30 A Idp * 120 A 1.0 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 36 TC=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Drain cut-off current IDSS VDS=30V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 2.0 Yfs VDS=10V,ID=15A 8.0 16.0 Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Max Unit 10 A 10 VGS=10V,ID=15A 11.5 VGS=4.5V,ID=15A VGS=4.0V,ID=15A VDS=10V,VGS=0,f=1MHZ 2.5 A V S 14 m 15.2 21 m 18 29 m 1300 pF 405 pF 190 pF Turn-on delay time ton 37 ns Rise time tr 500 ns Turn-off delay time toff 75 ns Fall time ID=15A,VGS(on)=10V,RG=10 ,VDD=15V tf 95 ns Total Gate Charge QG 25 nC Gate to Source Charge QGS 4.5 nC Gate to Drain Charge QGD 7.0 nC VDD = 24V, VGS = 10 V, ID = 30A 1 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1