SMD Type Product specification 2SK3510 TO-263 +0.1 1.27-0.1 Features Super low on-state resistance: +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 Low Ciss: Ciss = 8500 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) +0.2 8.7-0.2 RDS(on) = 8.5 m Unit: mm 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 75 V Gate to source voltage VGSS Drain current Power dissipation TC=25 20 V ID 83 A Idp * 332 A 125 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.5 TA=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=70V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 2.0 Yfs VDS=10V,ID=42A 30 RDS(on) VGS=10V,ID=42A Gate cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Typ 3.0 VDS=10V,VGS=0,f=1MHZ Unit 10 A 1 A 4.0 60 6.5 Ciss Max V S 8.5 m 8500 pF Output capacitance Coss 1300 pF Reverse transfer capacitance Crss 650 pF Turn-on delay time ton 35 ns Rise time tr Turn-off delay time toff Fall time tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD http://www.twtysemi.com ID=42A,VGS(on)=10V,RL=10 ,VDD=38V ID =83A, VDD =60V, VGS = 10 V [email protected] 28 ns 105 ns 16 ns 150 nC 30 nC 52 nC 4008-318-123 1 of 1