TYSEMI 2SK3668

Transistors
IC
SMD Type
Product specification
2SK3668
TO-263
+0.1
1.27-0.1
Features
Low gate charge
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
MAX. (VGS = 10 V, ID = 5.0 A)
0.1max
+0.1
1.27-0.1
+0.2
5.28-0.2
RDS(on) = 0.55
Surface mount package available
+0.2
2.54-0.2
+0.2
15.25-0.2
Low on-state resistance
+0.1
0.81-0.1
2.54
+0.2
2.54-0.2
30 V
+0.2
8.7-0.2
Gate voltage rating:
5.60
QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A)
5.08
1 Gate
+0.2
0.4-0.2
+0.1
-0.1
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain to source voltage
VDSS
400
V
Gate to source voltage
VGSS
30
V
ID
10
A
34
A
Drain current
Idp *
Power dissipation
TA=25
1.5
PD
W
100
TC=25
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
Unit
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Symbol
Testconditons
IDSS
VDS=400V,VGS=0
Min
IGSS
VGS= 30V,VDS=0
VDS=10V,ID=1mA
2.5
Yfs
VDS=10V,ID=5.0A
3.0
RDS(on)1
VGS=10V,ID=5.0A
Input capacitance
Ciss
Coss
Reverse transfer capacitance
Turn-on delay time
Rise time
tr
Turn-off delay time
toff
Fall time
tf
Max
10
VGS(off)
Output capacitance
Typ
100
3.5
5.6
0.4
Unit
A
nA
V
S
0.55
1320
pF
230
pF
Crss
13
pF
ton
18
ns
8
ns
VDS=10V,VGS=0,f=1MHZ
ID=5.0A,VGS(on)=10V,RG=10
,VDD=150V
44
ns
4
ns
VDD = 320V
VGS = 10 V
ID =10A
26
nC
7
nC
11
nC
VF(S-D)
IF = 10 A, VGS = 0 V
0.9
V
Reverse Recovery Time
trr
IF = 10 A, VGS = 0 V
350
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/ ìs
2.7
ìC
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Body Diode Forward Voltage
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