Product specification A44 Features 1. OUT High voltage 1 Emitter 2. GND 2 Base 3. IN 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 0.2 A Collector Power Dissipation PC 0.625 W Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO Ic=100uA, IE=0 400 V Collector-emitter breakdown voltage VCEO Ic=1mA, IB=0 400 V Emitter-base Breakdown voltage VEBO IE=100 A, IC=0 Collector cutoff current ICBO VCB=400V, IE=0 0.1 Collector cutoff current ICEO VCB=400V, IB=0 5 Emitter cutoff current IEBO DC current gain hFE 0.1 VCE=10V, IC=10mA 80 VCE=10V, IC=1mA 70 VCE=10V, IC=100mA 40 VCE=10V, IC=50mA 80 ìA 300 IC=50mA, IB=5mA 0.3 V VBE(sat) IC=10mA, IB=1mA 0.75 V Base-emitter saturation voltage fT IC=10mA, IB=1mA A V VCE(sat) http://www.twtysemi.com VEB=4V, IC=0 V ìA 0.2 Collector-emitter saturation voltage Transition frequency 5 VCE=20V, IC=10mA,f=30MHZ [email protected] 50 4008-318-123 MHz 1 of 1