Product specification AP2304AGN ▼ Simple Drive Requirement D ▼ Small Package Outline BVDSS 30V RDS(ON) 117mΩ ID ▼ Surface Mount Device 2.5A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. D G The SOT-23 package is universally used for all commercial-industrial applications. S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 30 V ±20 V 3 2.5 A 3 2 A 10 A Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient http://www.twtysemi.com 3 [email protected] Max. Value Unit 90 ℃/W 4008-318-123 1 of 2 Product specification AP2304AGN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 30 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=2.5A - - 117 mΩ VGS=4.5V, ID=2A - - 190 mΩ VDS=VGS, ID=250uA 1 - 3 V VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS VDS=10V, ID=2.5A - 2 - S o VDS=30V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=24V ,VGS=0V - - 10 uA Gate-Source Leakage VGS=±20V - - ±100 nA ID=2.5A - 3 5 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=250uA 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 0.8 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 1.8 - nC VDS=15V - 5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 9 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 11 - ns tf Fall Time RD=15Ω - 2 - ns Ciss Input Capacitance VGS=0V - 120 190 pF Coss Output Capacitance VDS=25V - 62 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 24 - pF Rg Gate Resistance f=1.0MHz - 1.67 - Ω Min. Typ. IS=1.2A, VGS=0V - - 1.2 V IS=2A, VGS=0V, - 24 - ns dI/dt=100A/µs - 23 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2