Product specification BAP51-03 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Low diode capacitance +0.1 2.6-0.1 Low diode forward resistance. 1.0max 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Parameter Symbol continuous reverse voltage continuous forward current total power dissipation Min Max Unit 50 V VR Ts = 90 storage temperature junction temperature thermal resistance from junction to soldering point IF 50 mA P tot 500 mW T stg -65 +150 Tj -65 +150 R th j-s 120 K/W Electrical Characteristics Ta = 25 Parameter Symbol Conditions forward voltage VF IF = 50 mA reverse voltage VR IR = 10 reverse current IR VR = 50 V VR = 0; f = 1 MHz 0.4 diode capacitance Cd VR = 1V; f = 1 MHz diode forward resistance rD A Typ Max Unit 0.95 1.1 V 50 V 100 nA 0.3 0.55 pF VR = 5V; f = 1 MHz 0.2 0.35 IF = 0.5 mA; f = 100 MHz; note 1 5.5 40 IF = 1 mA; f = 100 MHz; note 1 3.6 25 IF = 10 mA; f = 100 MHz; note 1 1.5 5 when switched from IF = 10 mA to IR = 6 mA; charge carrier life time Min L RL = 100 550 ns ;measured at IR = 3 mA Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. Marking Marking A5 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1