Product specification KAS516 (BAS516) SOD-523 Unit:mm ■ Features ● Small Surface Mounting Type 0.6 0.1 0.3 0.05 0.8 0.05 1.2 0.1 0.77max 1.6 0.1 0.07max +0.05 0.1 -0.02 ● High Speed ■ Absolute Maximum Ratings Ta = 25℃ Parameter Repetitive Peak Reverse Voltage DC Reverse Voltage Forward Current Symbol Rating Unit VRRM 85 V VR 75 V IF 250 mA Repetitive Peak Forward Current IFRM 500 mA Non-Repetitive Peak Forward Current IFSM 0.5 A Total Power Dissipation Ptot 500 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -65 to +150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Forward Voltage VF Reverse Current IR Capacitance Between Terminals CT Reverse Recovery Time trr Testconditons Min Typ Max IF = 1mA 0.715 IF = 10mA 0.855 IF = 50mA 1.0 IF = 150mA 1.25 VR = 25V 0.03 VR = 75V 1.0 Unit V μA VR = 0V, f = 1.0MHz 1.0 pF IF = 10mA, RL =100Ω 4.0 ns ■ Marking Marking 6 http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Product specification KAS516 (BAS516) Transistors ■ Electrical Characteristics Curves MBG382 IF(mA) IF(mA) MGM762 500 300 Typ. Max. Typ. 400 200 300 Tj = 150℃ 200 Tj = 25℃ 100 100 0 0 0 50 100 150 0 200 1 Ts(℃) 2 VF(V) Maximum Permissible Continuous Forward Current As A Function Of Soldering Point Temperature. Forward Current As A Function Of Forward Voltage. MBG704 IFSM(A) 100 10 Tj = 25℃ 1 0.1 1 10 100 1000 10000 tp(μs) Maximum Permissible Non-repetitive Peak Forward Current As A Function Of Pulse Duration. http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 Product specification KAS516 (BAS516) MBK881 MGA884 IR(nA) Cd(pF) 100000 0.6 f = 1MHZ Tj = 25℃ VR = 75V 10000 0.4 VR = 75V Max 1000 0.2 VR = 25V 100 Typ Typ 0 10 0 100 200 0 4 8 Reverse Current As A Function Of Junction Temperature. http://www.twtysemi.com [email protected] 12 16 VR(V) Tj(℃) Diode Capacitance As A Function Of Reverse Voltage(Typical Values) 4008-318-123 3 of 3