Product specification BAW101S SOT-363 Unit: mm +0.15 2.3-0.15 Features +0.1 1.25-0.1 0.525 +0.1 1.3-0.1 0.65 Small plastic SMD package 0.36 High switching speed: max. 50 ns +0.05 0.1-0.02 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 High continuous reverse voltage: 300 V +0.05 0.95-0.05 Electrically insulated diodes. Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Min Max Unit Per diode continuous reverse voltage 300 VR repetitive peak forward current series connection 600 series connection 600 single diode loaded; 250 double diode loaded; 140 300 VRRM continuous forward current IF repetitive peak forward current IFRM non-repetitive peak forward current IFSM total power dissipation Ptot storage temperature Tstg junction temperature 625 square wave; Tj = 25 prior to surge;t = 1 s Ts = 25 Tamb V mA mA 4.5 A 350 mW -65 +150 -65 +150 Tj operating ambient temperature V 150 thermal resistance from junction to soldering point Rth j-s 255 K/W thermal resistance from junction to ambient Rth j-a 357 K/W http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification BAW101S Electrical Characteristics Ta = 25 Parameter Symbol reverse breakdown voltage Conditions Min 300 Max Unit VBR(R) IR = 100 A forward voltage VF IF = 100 mA; note 1 1.1 mV reverse current IR VR = 25 V 150 nA 50 A VR = 250 V; Tamb = 150 reverse recovery time trr when switched from IF = 30 mA to IR = 30 mA; RL = 100 diode capacitance Cd 50 ns 2 pF ; measured at IR = 3 mA; VR = 0; f = 1 MHz; Note 1. Pulse test: pulse width = 300 s; ä = 0.02. Marking Marking K2 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2