TYSEMI BAW156

Product specification
BAW156
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Plastic SMD package
0.4
3
Features
Switching time: typ. 0.8
1
s
0.55
Low leakage current: typ. 3 pA
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Continuous reverse voltage:max. 75 V
+0.05
0.1-0.01
+0.1
0.97-0.1
Repetitive peak reverse voltage:max. 85 V
0-0.1
+0.1
0.38-0.1
Repetitive peak forward current:max. 500 mA.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Repetitive peak reverse voltage
Conditions
Min
Max
Unit
VRRM
85
V
Continuous reverse voltage
VR
75
V
Continuous forward current
IF
Repetitive peak forward current
single diode loaded;note 1
160
double diode loaded; note 1
140
IFRM
500
square wave; Tj = 25
Non-repetitive peak forward current
mA
prior to surge
s
4
t = 1 ms
1
t=1
IFSM
mA
t=1s
A
0.5
Total power dissipation
Ptot
Storage temperature
Tstg
Junction temperature
Tj
150
thermal resistance from junction to tie-point
Rth j-t p
360
K/W
thermal resistance from junction to ambient
Rth j-a
500
K/W
Tamb
25
250
; note 1
-65
mW
+150
Note
1. Device mounted on an FR4 printed-circuit board.
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Product specification
BAW156
Electrical Characteristics Ta = 25
Parameter
Symbol
Forward voltage
Conditions
VF
Typ
IF = 1 mA
900
IF = 10 mA
1000
IF = 50 mA
1100
IF = 150 mA
Reverse current
V R = 75 V
5
V R = 75 V; T j = 150
3
80
f = 1 MHz; V R = 0
3
Cd
trr
Reverse recovery time
when switched from IF = 10 mA to IR = 10 mA;
RL = 100
Unit
mV
1250
0.003
IR
Diode capacitance
Max
0.8
nA
pF
3
s
;measured at IR = 1 mA;
Marking
Marking
JZp
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2