SMD Type Product specification KC808(BC808) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High current gain. 1 0.55 High collector current. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low collector-emitter saturation voltage. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5 V Collector current (DC) IC -800 mA mW power dissipation PD 310 Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector-to-baser breakdown voltage VCBO IC = -10 Collector-to-emitter breakdown voltage VCEO Min Typ Max Unit -30 V IC = -10 mA, IB = 0 -25 V VEBO IE = -10 -5 V Collector cutoff current ICES VCB = -25 V, VBE= 0 -100 nA Emitter cutoff current IEBO VEB = -4 V, IC = 0 -100 nA DC current gain * hFE Emitter-to-base breakdown voltage A,VBE = 0 A, IC = 0 IC = -100 mA, VCE = -1 V 100 IC = -300 mA, VCE = -1 V 60 630 Collector saturation voltage * VCE(sat) IC = -500 mA, IB = -50 mA -0.7 V Base emitter on voltage VBE(on) VCE=-1V,IC=300mA -1.2 V Output Capacitance Cob Transition frequency fT * Pulsed: PW 350 ìs, duty cycle VCB=-10V,f=1MHz 12 IC = -10 mA, VCE = -5 V, f = 50 MHz 100 pF MHz 2% Marking NO. KC808-16 KC808-25 KC808-40 Marking 9GA 9GB 9GC hFE 100 250 160 400 250 630 1 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1