SMD Type Product specification KC818W(BC818W) Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 500 mA Peak collector current ICM 1 A Base current IB 100 mA power dissipation PD 250 mW Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-to-base breakdown voltage VCBO IC = 10 A, IE = 0 30 V Collector-to-emitter breakdown voltage VCEO IC = 10 mA, IB = 0 25 V Emitter-to-base breakdown voltage VEBO IE = 10 5 A, IC = 0 V VCB = 25 V, IE = 0 100 nA Collector cutoff current ICBO VCB = 25 V, IE = 0 , TA = 150 50 A Emitter cutoff current IEBO VEB = 4 V, IC = 0 100 nA hFE IC = 100 mA, VCE = -1 V KC818-16W DC current gain * KC818-25W KC818-40W 100 160 250 160 250 400 250 350 630 Collector saturation voltage * VCE(sat) IC = 500 mA, IB = 50 mA 0.7 Base to emitter voltage * VBE(sat) IC = 500 mA, IB = 50 mA 1.2 V V Collector-base capacitance CCb VCB = 10 V, f = 1 MHz Emitter-base capacitance Ceb VEB = 0.5 V, f = 1 MHz 60 pF IC = 50 mA, VCE = 5 V, f = 100 MHz 170 MHz Transition frequency * Pulsed: PW fT 350 ìs, duty cycle 6 pF 2% Marking NO. KC818-16W KC818-25W KC818-40W Marking 6E 6F 6G http://www.twtysemi.com [email protected] 4008-318-123 1 of 1