Transistors IC SMD Type Product specification BC846W,BC847W,BC848W Features Low current (max. 100 mA). Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC846W BC847W BC848W Unit Collector-base voltage Parameter VCBO 80 50 30 V Collector-emitter voltage VCEO 65 45 30 V Emitter-base voltage VEBO 6 6 5 V Collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 mA Total power dissipation Ptot 200 mW Tj 150 Storage temperature Tstg -65 to +150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient Rth j-a 625 Junction temperature http://www.twtysemi.com [email protected] K/W 4008-318-123 1 of 2 Transistors IC SMD Type Product specification BC846W,BC847W,BC848W Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current DC current gain Max Unit ICBO VCB = 30 V; IE = 0 Testconditons Min Typ 15 nA ICBO VCB = 30 V; IE = 0;Tj = 150 5 ìA IEBO VEB = 5 V; IC = 0 100 nA BC846W 110 450 BC847W,BC848W 110 800 hFE BC846AW,BC847AW IC = 2 mA; VCE = 5 V 110 180 220 BC846BW,BC847BW 200 290 450 BC847CW 420 520 800 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) IC = 10 mA; IB = 0.5 mA 90 250 mV IC = 100 mA; IB = 5 mA; * 200 600 mV IC = 10 mA; IB = 0.5 mA 700 IC = 100 mA; IB = 5 mA;* Base-emitter voltage VBE 900 IC = 2 mA; VCE = 5 V 580 660 IC = 10 mA; VCE = 5 V Collector capacitance CC VCB = 10 V; IE = Ie = 0;f = 1 MHz Transition frequency fT VCE = 5 V; IC = 10 mA;f = 100 MHz Noise figure NF IC = 200 ìA; VCE = 5 V;RS = 2 kÙ; f = 1 kHz;B = 200 Hz * Pulse test: tp 300µs, ä mV mV 700 mV 770 mV 3 100 pF MHz 10 dB 0.02. hFE Classification TYPE BC846W BC846AW BC846BW Marking 1D 1A 1B TYPE BC847W BC847AW BC847BW BC847CW Marking 1H 1E 1F 1G TYPE BC848W Marking 1M http://www.twtysemi.com [email protected] 4008-318-123 2 of 2