Transistors IC SMD Type BC856W,BC857W,BC858W Features Low current (max. 100 mA). Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BC856W BC857W BC858W Unit Collector-base voltage VCBO -80 -50 -30 V Collector-emitter voltage VCEO -65 -45 -30 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Peak collector current ICM -200 mA Peak base current IBM -200 mA Total power dissipation mW Ptot 200 Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient Rth j-a 625 http://www.twtysemi.com [email protected] K/W 4008-318-123 1 of 2 Transistors IC SMD Type BC856W,BC857W,BC858W Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current Testconditons ICBO VCB = -30 V; IE = 0 ICBO VCB = -30 V; IE = 0;Tj = 150 IEBO VEB = -5 V; IC = 0 Min BC856W Typ Max -1 -15 nA -4 ìA -100 nA 125 BC857W,BC858W DC current gain BC856AW,BC857AW hFE IC = -2 mA; VCE = -5 V BC856BW,BC857BW BC857CW 475 125 800 125 250 220 475 420 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Base-emitter voltage VBE 800 IC = -10 mA; IB = -0.5 mA -75 -300 mV IC = -100 mA; IB = -5 mA;* -250 -600 mV IC = -10 mA; IB = -0.5 mA -700 mV IC = -100 mA; IB = -5 mA;* -850 mV IC = -2 mA; VCE = -5 V -600 -650 IC = -10 mA; VCE = -5 V Collector capacitance CC VCB = -10 V; IE = Ie = 0;f = 1 MHz Emitter capacitance Ce VEB = -0.5 V; IC = Ic = 0;f = 1 MHz Transition frequency fT VCE = -5 V; IC = -10 mA;f = 100 MHz Noise figure NF IC = -200 ìA; VCE = -5 V;RS = 2 kÙ; f = 1 kHz;B = 200 Hz * Pulse test: tp 300ìs, ä Unit -750 mV -820 mV 3 pF 12 100 pF MHz 10 dB 0.02. hFE Classification TYPE BC856W BC856AW BC856BW Marking 3D 3A 3B TYPE BC857W BC857AW BC857BW BC857CW Marking 3H 3E 3F 3G TYPE BC858W Marking 3M http://www.twtysemi.com [email protected] 4008-318-123 2 of 2