Transistors IC SMD Type BC859W,BC860W Features Low current (max. 100 mA). Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC859W BC860W Unit Collector-base voltage Parameter VCBO -30 -50 V Collector-emitter voltage VCEO -30 -45 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Peak collector current ICM -200 mA Peak base current IBM -200 mA Total power dissipation Ptot 200 mW Tj 150 Storage temperature Tstg -65 to +150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient Rth j-a 625 Junction temperature http://www.twtysemi.com [email protected] K/W 4008-318-123 1 of 2 Transistors IC SMD Type BC859W,BC860W Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current Max Unit ICBO IE = 0; VCB = -30 V Testconditons Min -15 nA ICBO IE = 0; VCB = -30 V; Tj = 150 -4 ìA IEBO IC = 0; VEB = -5 V -100 nA BC859W; BC860W DC current gain hFE BC859BW; BC860BW IC = -2 mA; VCE = -5 V; BC859CW; BC860CW Collector-emitter saturation voltage VCE(sat) Typ 220 800 220 475 420 800 IC = -10 mA; IB = -0.5 mA -300 mV IC = -100 mA; IB = -5 mA; -650 mV 750 mV 820 mV 5 pF IC = -2 mA; VCE = -5 V 600 Base-emitter voltage *2 VBE Collector capacitance CC IE = ie = 0; VCB = -10 V; f = 1 MHz Emitter capacitance Ce IC = ic = 0; VEB = -500 mV; f = 1 MHz Transition frequency fT IC = -10 mA; VCE = -5 V; f = 100 MHz IC = -10 mA; VCE = -5 V Noise figure BC859W; BC860W; BC859BW; BC860BW; BC859CW; BC860CW NF 10 pF 100 MHz IC = -200 ìA; VCE = -5 V; RS = 2 kÙ;f = 10 Hz to 15.7 kHz 4 IC=-200 ìA; VCE = -5 V; RS = 2 kÙ;f = 1 kHz; B = 200 Hz 4 dB *1. VBEsat decreases by about -1.7 mV/K with increasing temperature. *2. VBE decreases by about -2 mV/K with increasing temperature. hFE Classification TYPE BC859W BC859BW BC859CW Marking 4D 4B 4C TYPE BC860W BC860BW BC860CW Marking 4H 4F 4G http://www.twtysemi.com [email protected] 4008-318-123 2 of 2