Transistors IC SMD Type Product specification BCX19 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low voltage (max. 45 V). 1 0.55 High current (max. 500 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Peak collector current ICM 1 A Peak base current IBM 200 mA Total power dissipation * Ptot 250 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min ICBO IE = 0; VCB = 20 V ICBO IE = 0; VCB = 20 V; Tj = 150 Emitter cutoff current IEBO IC = 0; VEB = 5 V IC = 100mA; VCE = 1 V 100 DC current gain * hFE IC = 300 mA;VCE = 1 V 70 IC = 500 mA;VCE = 1 V 40 Collector cutoff current Collector-emitter saturation voltage VCE(sat) IC = 500 mA; IB = 50 mA Base to emitter voltage * VBE IC = 500 mA; VCE = 1 V Collector capacitance CC IE = ie = 0; VCB = 10 V; f = 1 MHz Transition frequency fT IC = 10 mA; VCE = 5 V; f = 100 MHz * Pulse test: tp 300 ìs; d Typ Max Unit 100 nA 5 ìA 100 nA 600 620 1.2 5 100 mV V pF MHz 0.02. Marking Marking U1 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1