Product specification BD435 Features Medium Power Linear and Switching Applications 1 EMITTER 2 COLLECTOR 3 BASE Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 32 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 4 A Collector current (Pulse) ICP 7 A Base current IB 1 A Collector dissipation PC 36 W Junction temperature Tj 150 Tstg -65 to +150 Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit VCEO(SUS) IC = 100 mA, IB = 0 CollectorCut-offCurrent I CBO V CB = 32 V, IE = 0 100 ìA CollectorCut-offCurrent ICEO VCE = 32 V, VBE = 0 100 ìA EmitterCut-offCurrent IEBO VEB = 5 V, IC = 0 1 mA DCCurrentGain h FE 0.5 V 1.1 V Collector-emitterSustainingVoltage VCE = 5 V, IC =10mA VCE = 1 V ,I C = 500mA VCE = 1 V, IC = 2 A Collector-emittersaturationvoltage VCE (sat) IC = 2 A, IB =0.2A Base-EmitterONVoltage VBE (on) VCE = 1 V, IC = 2 A CurrentGainBandwidthProduct http://www.twtysemi.com fT VCE = 1 V, IC =250mA [email protected] 32 40 85 V 130 140 50 0.2 3 4008-318-123 MHz 1 of 1