Transistors SMD Type Product specification BF821,BF823 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High voltage (max. 300 V). 1 0.55 Low current (max. 50 mA) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Symbol BF821 VCBO BF823 Collector-emitter voltage BF821 VCEO BF823 Emitter-base voltage VEBO Rating Unit -300 V -250 V -300 V -250 V -5 V Collector current IC -50 mA Peak collector current ICM -100 mA Peak base current IBM -50 mA mW Total power dissipation * Ptot 250 Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Testconditons nA -10 ìA -50 nA IC = -30 mA; IB = -5 mA -800 mV IC = ic = 0; VCB = -30 V; f = 1 MHz 1.6 pF DC current gain hFE IC = -25 mA; VCE = -20 V Cre Transition frequency fT Unit -10 IC = 0; VEB = -5 V VCEsat Max IE = 0; VCB = -200 V; Tj = 150 IEBO Feedback capacitance Typ IE = 0; VCB = -200 V Emitter cutoff current collector-emitter saturation voltage Min 50 IC = -10 mA; VCE = -10 V; f = 100 MHz 60 MHz hFE Classification TYPE BF821 BF823 Marking 1W 1Y http://www.twtysemi.com [email protected] 4008-318-123 1 of 1