SMD Type SMD Type Product specification BSS63R SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -110 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -6 V IC -100 mA Ptot 330 mW Tj,Tstg -55 to +150 Continuous collector current Power dissipation Operating and storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10ìA -110 V Collector-emitter breakdown voltage * V(BR)CEO IC=-100ìA -100 V Emitter-base breakdown voltage V(BR)EBO IE=-10ìA -6 Collector-base cut-off current ICBO VCB=-90V VCB=-90V,Ta = 150 Emitter-base current IEBO VEB=-6V V -100 -50 nA ìA -200 nA Collector-emitter saturation voltage VCE(sat) IC=-25mA, IB=-2.5mA -250 V Base-emitter saturation voltage VBE(sat) IC=-25mA, IB=-2.5mA -900 V DC current gain hFE Transitional frequency fT Output capacitance Cobo * Pulse test: tp = 300 ìs; d IC=-10mA,VCE=-1V IC=-25mA,VCE=-1V 30 30 IC=25mA, VCE=-5V, f=35MHz 50 VCB=-10V, f=1MHz 85 MHz 3 pF 0.02. Marking Marking T6 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1