Product specification BYV26E ■ Features ● Low leakage current ● Excellent stability ● Guaranteed avalanche energy absorption capability ● High maximum operating temperature DO41 ■ Absolute Maximum Ratings Ta = 25℃ Parameter repetitive peak reverse voltage Symbol Rating Unit V RRM 1000 V continuous reverse voltage VR 1000 V average forward current *1 IF(AV) 1.00 A average forward current *2 IF(AV) 0.65 A repetitive peak forward current IFR M 10.0 A non-repetitive peak forward current *3 IF SM 30 A non-repetitive peak reverse avalanche energy *4 ERSM 10 mJ storage temperature Ts tg -65 to +175 ℃ junction temperature Tj -65 to +175 ℃ thermal resistance from junction to tie-point (lead length = 10 mm) Rth j-tp 46 ℃/W thermal resistance from junction to ambient *5 Rth j-a 100 ℃/W *1 Ttp = 85 ℃ ; lead length = 10 mm; *2 Tamb = 60 ℃; PCB mounting,averaged over any 20 ms period *3 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = V RRMmax *4 IR = 400 mA; Tj = Tj max prior to surge; inductive load switched off *5 Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer≥ 40 μm, http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification BYV26E ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Forward voltage VF Reverse avalanche breakdown voltage V (BR)R Reverse current IR Testconditons I R = 0.1 mA Unit 1.3 V 1100 V 5 150 75 I F = 0.5 A to IR = 1A; measured at IR = 0.25 A Diode capacitance Cd f = 1 MHz; V R = 0 V http://www.twtysemi.com Max V R = V RRMmax;Tj = 165 ℃ trr dIR/dt Typ V R = V RRMmax Reverse recovery time Maximum slope of reverse recovery current Min I F = 1 A; Tj = Tj max 40 when switched from,I F = 1 A to VR ≥ 30 V and dIF/dt = -1 A/μs [email protected] 4008-318-123 μA ns pF 6 A/μs 2 of 2