Product specification DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C 80mΩ @ VGS = 4.5V -2.7A 110mΩ @ VGS = 2.5V -2.1A V(BR)DSS -20V Features • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • Applications • • • • Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (approximate) • • Backlighting Power Management Functions DC-DC Converters Motor control • • Drain SOT23 D Gate Source Top View S G Internal Schematic Top View Pin Configuration Ordering Information (Note 4) Part Number DMG2301U-7 Notes: Case SOT23 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information YM NEW PRODUCT Description G21 Date Code Key Year Code 2009 W Month Code Jan 1 2010 X Feb 2 http://www.twtysemi.com 2011 Y Mar 3 2012 Z Apr 4 May 5 [email protected] G21 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2013 A Jun 6 2014 B Jul 7 2015 C Aug 8 2016 D Sep 9 2017 E Oct O Nov N 2018 F Dec D 1 of 2 Product specification DMG2301U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V Steady State Continuous Drain Current (Note 5) VGS = -2.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -20 ±8 -2.7 ID A -2.1 -2.1 -1.7 -27 ID Pulsed Drain Current (Note 6) Units V V IDM A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 0.8 157 -55 to +150 Unit W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.0 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -16V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) -0.45 ⎯ V Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ |Yfs| VSD ⎯ ⎯ 10 -0.75 -1.0 80 110 ⎯ -1.0 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A VDS = -5V, ID = -2.8A VGS = 0V, IS = -1A Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 608 82 72 44.9 6.5 0.9 1.5 12.5 10.3 46.5 22.2 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 40 30 140 66 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = -6V, VGS = 0V f = 1.0MHz VGS = 0V, VDS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -3A VDS = -10V, VGS = -4.5V, RL = 10Ω, RG = 1.0Ω, ID = -1A 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature.. 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. http://www.twtysemi.com [email protected] 2 of 2