Product specification DMG6968U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 25mΩ @ VGS = 4.5V • 29mΩ @ VGS = 2.5V • 36mΩ @ VGS = 1.8V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (approximate) Drain D Gate Gate Protection Diode ESD PROTECTED TO 2kV Source Internal Schematic Top View S G Top View Ordering Information (Note 3) Part Number DMG6968U-7 DMG6968UQ-7 Notes: Qualification Commercial Automotive Case SOT23 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposefully added lead. YM Marking Information 2N4 Date Code Key Year Code Month Code 2009 W Jan 1 http://www.twtysemi.com 2010 X Feb 2 Mar 3 2N4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2011 Y Apr 4 May 5 [email protected] 2012 Z Jun 6 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D 1 of 2 Product specification DMG6968U Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) Steady State Units V V IDM Value 20 ±12 6.5 5.2 30 Symbol PD RθJA TJ, TSTG Value 1.3 157 -55 to +150 Unit W °C/W °C TA = 25°C TA = 70°C ID Pulsed Drain Current A A Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Gate-Source Breakdown Voltage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: TJ = 25°C Symbol Min Typ Max Unit BVDSS IDSS IGSS BVSGS 20 ⎯ ⎯ ±12 ⎯ ⎯ ⎯ - ⎯ 1.0 ±10 - V μA μA V VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±10V, VDS = 0V VDS = 0V, IG = ±250μA VGS(th) 0.5 ⎯ mΩ |Yfs| ⎯ 0.9 25 29 36 ⎯ V RDS (ON) ⎯ 21 23 28 8 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 6.5A VGS = 2.5V, ID = 5.5A VGS = 1.8V, ID = 3.5A VDS = 10V, ID = 5A Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 151 91 32 8.5 1.6 2.8 54 66 613 205 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nC nC nC ns ns ns ns S Test Condition VDS = 10V, VGS = 0V f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 6.5A VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω, ID = 1A 2. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal vias to bottom layer 1 inch square copper plate. 3. Short duration pulse test used to minimize self-heating effect. http://www.twtysemi.com [email protected] 2 of 2