Product specification MMBZ5232BW Features Planar Die Construction General Purpose, Medium Current Ideally Suited for Automated Assembly Processes Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VF 0.9 V Pd 200 mW 625 /W @ IF = 10mA Forward Voltage Power Dissipation *1 Thermal Resistance, Junction to Ambient Air *1 R Operating and Storage Temperature Range JA Tj, TSTG -65 to +150 *1. Part mounted on FR-4 PC board with recommended pad layout Electrical Characteristics @TA=25 unless otherwise specified Maximum ZenerImpedance *2 Zener Voltage Range *1 Maximum Reverse Leakage Current *1 Type Number Vz @IZT MMBZ5232BW IZT Nom (V) Min (V) Max (V) mA 5.6 5.32 5.88 20 ZZT @ IZT ZZK @ IZK= 0.25mA 11 1600 IR @ VR uA V 5 3 *1. Short duration test pulse used to minimize self-heating effect. *2. f = 1KHz. Marking Marking KE2 http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Product specification MMBZ5232BW 1000 CT, TOTAL CAPACITANCE (pF) Tj = 25 °C f = 1MHz 0.3 0.2 100 VR = 1V VR = 2V 0.1 10 10 1 0 0 25 50 75 100 125 150 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 2 Total Capacitance vs Nominal Zener Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs Ambient Temperature 100 1000 PPK, PEAK SURGE POWER (W) PD, POWER DISSIPATION (W) 0.4 IZ = 1.0mA 100 10 10 1 1 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 3 Zener Voltage vs. Zener Impedence http://www.twtysemi.com [email protected] 1 10 100 1000 PULSE WIDTH (ms) Fig. 4 Maximum Non-repetitive Surge Power 4008-318-123 2 of 3 Product specification MMBZ5232BW 50 30 Tj = 25°C Tj = 25°C 10 5V6 12 6V8 IZ, ZENER CURRENT (mA) IZ, ZENER CURRENT (mA) 40 8V2 30 20 10 Test Current IZ 20mA Nominal Zener Voltage 15 20 Test current IZ 18 22 10 27 33 36 39 0 0 0 1 2 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 5 Zener Breakdown Characteristics http://www.twtysemi.com 10 [email protected] 0 10 20 30 VZ, ZENER VOLTAGE (V) Fig. 6 Zener Breakdown Characteristics 4008-318-123 40 3 of 3