Transistors SMD Type Product specification MMSTA42 SOT-323 Unit:mm 1.3±0.1 1 0.525 0.65 2 2.3±0.15 ● High breakdown voltage 1.25±0.1 ■ Features ● Low collector-emitter saturation voltage 0.36 3 ● Complementary to MMSTA92 0.3±0.1 0.1 +0.05 -0.02 0.95±0.05 0.1max 2.1±0.1 1 Emitter 2 Base 3 Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 300 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-to-base breakdown voltage V(BR)CBO Ic= 100 μA， IE=0 300 Collector-to-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0 300 V Emitter-to-base breakdown voltage V(BR)EBO IE= 100 μA， IC=0 5 V Collector cutoff current IcBO VCB= 200 V , IE=0 Emitter cutoff current IEBO VEB= 5V , IC=0 DC current gain hFE VCE= 10V, IC= 1mA 60 VCE= 10V, IC= 10mA 100 VCE= 10V, IC= 30mA 75 V 0.25 μA 0.1 μA 200 Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB= 2mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 20 mA, IB= 2mA 0.9 V Output Capacitance Cob VCB = 20V, f = 1.0MHz, IE = 0 Transition frequency fT VCE= 20V, IC= 10mA,f=30MHz 3.0 50 pF MHz ■ Marking Marking K3M http://www.twtysemi.com [email protected] 4008-318-123 1of 1