CHA6358-99F 27-31.5GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6358-99F is a three stages monolithic HPA that typically provides an output power of 31dBm at 1dB gain compression associated to a high IP3 output of 38.5dBm. It is designed for a wide range of applications, from professional to commercial communication systems The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is available in chip form. Vg1a Vd1a Vg2a Vd2a Vg3a Vd3a RF out RF in Vg1b Vd1b Vg2b Vd2b Vg3b Vd3b Output power (dBm) ■ Broadband performances: 27-31.5GHz ■ Pout: 31dBm at 1dB compression ■ OIP3: 38.5dBm ■ Linear gain: 22dB ■ DC bias: Vd=6.0Volt@Id=750mA ■ Chip size: 2.5x2.5x0.1mm 36 50 34 40 32 30 30 20 28 PAE (%) Main Features 10 P-1dB Psat PAE at 1dB 26 0 27 28 29 30 31 32 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OIP3 Output third order interception point Pout Output Power @1dB comp. Ref. : DSCHA63583058 - 27 Feb 13 1/12 Min 27.0 Typ Max 31.5 22 38.5 31 Unit GHz dB dBm dBm Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6358-99F 27-31.5GHz High Power Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +6.0V Symbol Parameter Min Typ Max Unit Fop Operating frequency range 27 31.5 GHz G Small Signal Gain 22 dB ΔG Gain variation in temperature 0.03 dB/°C P1dB Output power @1dB compression 31 dBm Psat Saturated output power 32.5 dBm PAE Power Added Efficiency at P-1dB 25 % OIP3 Output IP3 38.5 dBm Rlin Input Return Loss 10 dB Rlout Output Return Loss 14 dB Idq Total quiescent drain current 750 mA These values are representative of on test fixture measurements with a bonding wire of typically 0.2nH at the RF ports. Ref. : DSCHA63583058 - 27 Feb 13 2/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6358-99F 27-31.5GHz High Power Amplifier Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 6.5V V Id Drain bias current 1 A Vg Gate bias voltage -2 to +0.4 V (2) Pin Maximum peak input power overdrive +15 dBm Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Typical Bias Conditions Tamb.= +25°C Symbol Pad No Parameter 3, 5, 7, Vd DC drain voltage 9,11,13 2, 4, 6, Vg DC gate voltage (1) 10,12,14 (1) To be adjusted in order to achieve Id: 750mA Ref. : DSCHA63583058 - 27 Feb 13 3/12 Values 6 Unit V -0.7 V Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6358-99F 27-31.5GHz High Power Amplifier Typical on-wafer Sij parameters Tamb.= +25°C, Vd = +6.0V, Id = 750mA Freq S11 PhS11 S21 (GHz) (dB) (°) (dB) 1.0 -0.551 158.5 -93.379 2.0 -2.421 134.6 -80.802 3.0 -6.244 50.0 -95.935 4.0 -5.974 -111.6 -87.556 5.0 -3.426 -152.9 -66.555 6.0 -2.867 -170.4 -52.616 7.0 -2.828 178.8 -40.621 8.0 -3.021 171.3 -33.067 9.0 -3.327 166.3 -31.038 10.0 -3.589 163.4 -31.395 11.0 -3.635 162.0 -32.037 12.0 -3.368 160.6 -28.808 13.0 -2.893 157.9 -21.731 14.0 -2.393 153.4 -14.255 15.0 -1.991 147.7 -8.702 16.0 -1.682 141.4 -6.401 17.0 -1.442 134.5 -5.552 18.0 -1.264 127.2 -4.341 19.0 -1.149 119.2 -2.418 20.0 -1.061 110.9 -0.318 21.0 -0.918 101.7 2.131 22.0 -0.803 90.7 5.002 23.0 -0.658 78.0 8.590 24.0 -0.451 61.5 12.909 25.0 -0.388 37.6 17.935 26.0 -1.662 0.7 22.522 27.0 -6.795 -39.2 24.359 28.0 -14.855 -60.3 24.154 29.0 -25.338 -66.4 23.474 30.0 -26.446 -4.4 22.423 31.0 -21.698 -80.9 22.228 32.0 -20.535 -144.6 21.813 33.0 -14.861 -154.9 20.492 34.0 -8.473 155.7 18.753 35.0 -7.509 105.6 14.728 36.0 -8.251 64.3 10.002 37.0 -9.279 25.2 5.374 38.0 -9.981 -15.4 1.158 39.0 -9.806 -55.2 -2.819 40.0 -8.620 -91.1 -7.022 41.0 -7.246 -120.3 -11.373 42.0 -5.933 -145.4 -16.083 43.0 -4.769 -167.5 -20.978 44.0 -3.968 172.7 -26.079 45.0 -3.215 156.1 -31.492 Ref. : DSCHA63583058 - 27 Feb 13 PhS21 (°) 40.7 36.0 177.7 47.8 100.3 75.1 23.8 -52.5 -118.3 -163.1 178.0 178.5 162.5 123.8 66.2 7.2 -39.1 -76.3 -111.8 -147.2 178.1 143.2 106.8 65.5 14.9 -52.5 -129.3 160.6 97.1 38.1 -17.1 -82.9 -145.5 143.5 76.2 19.2 -30.8 -77.1 -123.3 -168.7 146.9 103.7 64.5 30.1 -1.9 4/12 S12 (dB) -86.551 -86.900 -88.285 -87.589 -92.067 -102.38 -91.666 -72.837 -69.331 -62.180 -59.603 -59.104 -59.194 -56.373 -55.750 -56.274 -57.430 -54.554 -54.508 -55.451 -51.757 -51.993 -52.168 -54.026 -56.156 -66.692 -56.327 -52.705 -50.758 -50.015 -50.967 -47.172 -46.708 -52.160 -56.905 -63.017 -62.276 -58.178 -64.498 -63.483 -55.962 -56.607 -55.999 -55.080 -51.391 PhS12 (°) -113.2 -144.4 109.0 -66.7 -61.2 -144.5 2.1 -56.7 -95.6 -125.4 -163.8 172.9 155.3 137.4 115.9 102.9 96.8 88.8 73.7 65.1 56.1 28.0 10.5 -22.3 -52.4 -122.4 50.9 -4.2 -62.8 -118.0 -173.5 114.4 41.9 -40.9 -61.2 -116.2 -88.4 -159.0 99.0 -43.2 -162.4 166.0 144.9 133.1 144.6 S22 (dB) -0.111 -0.162 -0.225 -0.324 -0.546 -1.250 -4.534 -20.496 -5.781 -3.241 -2.554 -2.487 -2.776 -3.230 -2.989 -2.480 -2.621 -2.979 -3.261 -3.435 -3.561 -3.748 -4.052 -4.595 -5.716 -8.214 -11.960 -17.273 -18.844 -11.658 -9.521 -8.751 -6.933 -5.818 -5.726 -5.949 -5.786 -5.520 -4.647 -3.614 -2.604 -1.859 -1.434 -1.322 -1.471 PhS22 (°) 172.1 164.2 155.8 146.0 133.3 114.0 78.4 -78.2 -168.9 166.1 150.2 138.1 128.3 122.2 118.4 109.1 98.0 88.5 79.6 70.0 59.1 46.3 31.5 14.1 -6.8 -28.5 -42.7 -46.0 7.9 4.0 -23.2 -45.9 -63.9 -99.1 -130.4 -161.3 167.6 138.3 110.3 82.0 55.0 29.8 6.3 -14.6 -32.5 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6358-99F 27-31.5GHz High Power Amplifier Typical Test fixture Measurements Tamb.= +25°C, Vd = +6.0V, Id = 750mA These values are representative of on test fixture measurements with a bonding wire of typically 0.2nH at the RF ports. Linear Gain & Return losses versus Frequency 30 25 20 Gain & Return loss (dB) 15 10 5 S11 S21 S22 0 -5 -10 -15 -20 -25 -30 25 27 29 31 33 35 Frequency (GHz) Linear Gain versus Frequency & Idq 34 32 30 Gain (dB) 28 26 24 22 20 18 750mA 850mA 16 14 24 25 26 27 28 29 30 31 32 33 34 35 36 Frequency (GHz) 1- Ref. : DSCHA63583058 - 27 Feb 13 5/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6358-99F 27-31.5GHz High Power Amplifier Typical Test fixture Measurements Tamb.= +25°C, Vd = +6.0V, Id = 750mA Linear Gain versus Frequency &Temperature 34 32 30 28 26 24 Gain (dB) 22 20 18 16 14 12 10 8 85°C 6 25°C -40°C 4 2 0 24 25 26 27 28 29 30 31 32 33 34 35 36 Frequency (GHz) 36 50% 35 45% 34 40% 33 35% 32 30% 31 25% 30 PAE Output power (dBm) Output Power & PAE versus Frequency 20% P-1dB Psat PAE at 1dB 29 15% 28 10% 27 5% 26 0% 27 28 29 30 31 32 Frequency (GHz) Ref. : DSCHA63583058 - 27 Feb 13 6/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6358-99F 27-31.5GHz High Power Amplifier Typical Test fixture Measurements Tamb.= +25°C, Vd = +6.0V, Id = 750mA Drain current versus input Power & Id quiescent 1.4 1.3 1.2 Drain current (A) 1.1 1 Idq= 750mA Idq= 850mA 0.9 0.8 0.7 0.6 0.5 0.4 -10 -5 0 5 10 15 Input power (dBm) Output IP3 versus Pout DCL & Frequency 44 43 42 OIP3 (dBm) 41 40 39 38 37 36 27GHz 28GHz 29GHz 30GHz 31GHz 32GHz 35 34 12 14 16 Ref. : DSCHA63583058 - 27 Feb 13 18 20 22 24 Output power DCL (dBm) 7/12 26 28 30 32 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6358-99F 27-31.5GHz High Power Amplifier Typical Test fixture Measurements Tamb.= +25°C, Vd = +6.0V, Id = 750mA Output IP3 versus Pout DCL & Temperature Freq = 27GHz 44 43 42 OIP3 (dBm) 41 40 39 38 37 36 25°C +85°C -40°C 35 34 12 14 16 18 20 22 24 Output power DCL (dBm) 26 28 30 32 IMD3 versus Pout DCL & Frequency 60 55 IMD3 (dBc) 50 45 40 35 30 25 27GHz 28GHz 29GHz 30GHz 31GHz 32GHz 20 12 14 16 18 20 22 24 26 28 30 32 Output power DCL (dBm) Ref. : DSCHA63583058 - 27 Feb 13 8/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6358-99F 27-31.5GHz High Power Amplifier Mechanical data 2 34 5 6 7 8 1 14 13 12 11 10 9 Chip thickness: 100µm. Chip size: 2500x2500 ±35µm All dimensions are in micrometers Pin number 1 2,14 Pin name IN VG1A, VG1B 3,13 VD1A, VD1B 4,12 5, 11 6, 10 VG2A, VG2B VD2A, VD2B VG3A, VD3B(1) 7, 9 8 (1) (2) Description RF in Gate Stage1 Drain stage1 Gate Stage2 Drain stage2 Gate Stage3 (2) VD3A, VG3B OUT Drain stage3 RF out VD3B is the label on the die pad, corresponding to gate access on the 3rd stage VG3B is the label on the die pad, corresponding to drain access on the 3rd stage Ref. : DSCHA63583058 - 27 Feb 13 9/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6358-99F 27-31.5GHz High Power Amplifier Recommended assembly plan To To Drain Drain DC DC power powersupply supply ToToGate GateDC DC power powersupply supply 120pF 10nF 2 3 4 5 6 7 1µF IN IN OUT 14 13 12 11 10 9 To Gate DC power supply To Drain DC power supply - For best thermal and electrical performances, chip should be brazed on a metal base plate. - 2 wedge bonding, 25µm diameter, is preferred, with a maximum length of 300µm for RF IN and OUT. Recommended circuit bonding table Label IN, OUT Type RF Decoupling Not required VDxy VGxy Vd Vg 120pF, 10nF, 1µF 120pF, 10nF, 1µF Ref. : DSCHA63583058 - 27 Feb 13 10/12 Comment Maximum 300µm length with a wire diameter of 25 µm Drain Supply Gate Supply Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6358-99F 27-31.5GHz High Power Amplifier DC Schematic 6V, 750mA G2 D1 G1 D2 G3 D3 6.5 110mA 6.5 5 40mA 225mA 3.5 15 5 RF out RF in 15 3.5 5 225mA 6.5 5 6.5 40mA G1 Ref. : DSCHA63583058 - 27 Feb 13 110mA D1 G2 D2 11/12 G3 D3 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6358-99F 27-31.5GHz High Power Amplifier Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Ordering Information Chip form: CHA6358-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA63583058 - 27 Feb 13 12/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34