CHA6517 RoHS COMPLIANT 6-18GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: • the backside of the chip is both RF and DC grounded • bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process. Vg Vd3 OUTPUT A INPUT A Vd1 Vd2 Vd3 OUTPUT B INPUT B Vg Vd3 Main Features 0.25µm Power pHEMT Technology 6 – 18GHz Frequency Range 32dBm Output Power per channel Compatible for balanced configuration 22dB nominal Gain Quiescent Bias point : 600mA @ 8V per channel Chip size: 4.32 x 3.90 x 0.07mm Output Power versus Frequency Main Characteristics Tamb=25°C (Tamb is the back-side of the chip) Symbol Parameter Min Typ Max Unit 18 GHz F_op Operating frequency range 6 Psat Saturated output power 30 32 dBm G_lin Linear gain 19 22 dB Ref. DSCHA65179250 - 07 Sept 09 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 6-18GHz High Power Amplifier CHA6517 Electrical Characteristics (one channel) Tamb=25°C (2), Vd=8V, Id (Quiescient)=0.6A, Pulsed biasing mode Symbol F_op G_lin RL_in RL_out Psat PAE_sat Vd Id Vg Top Parameter Operating frequency Linear gain (Pin=-5dBm) Input Return Loss Output Return Loss Saturated output power (Pin=11dBm) Power Added Efficiency in saturation Positive supply voltage Power supply quiescent current (1) Negative supply voltage Operating temperature range (2) Min 6 19 30 Typ 22 -14 -8 32 15 8 0.6 -0.4 -40 Max 18 -8 -4 +70 Unit GHz dB dB dB dBm % V A V °C (1) This parameter is fixed by gate voltage Vg (2) The reference is the back-side of the chip Absolute Maximum Ratings (1) Symbol Pin (2) Vd (2) Id (2) Pd (2) Tj Tstg (1) (2) Parameter Maximum Input power Positive supply voltage without RF power Positive supply quiescent current Power dissipation Junction temperature Storage temperature range Values 19 8.5 1 13.5 175 -55 to +125 Unit dBm V A W °C °C Operation of this device above anyone of these parameters may cause permanent damage. These values are specified for Tamb=25°C Ref. DSCHA65179250 - 07 Sept 09 2/10 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz High Power Amplifier CHA6517 Typical measured characteristics On Wafer Measurements, S parameters (one channel): Tamb=25°C, Vd=8V, Id (Quiescient)=0.6A, pulsed mode : Gain dBS22 dBS11 Input and Output Return losses Ref. DSCHA65179250 - 07 Sept 09 3/10 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz High Power Amplifier CHA6517 On Wafer Measurements (one channel): Tamb=25°C, Vd=8V, Id (Quiescient)=0.6A, Pin=11dBm, pulsed mode: Output Power versus Frequency 18GHz 12GHz 6GHz Id versus Pin Ref. DSCHA65179250 - 07 Sept 09 4/10 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz High Power Amplifier CHA6517 In test jig Measurements (one channel): Vd=8V, Id (Quiescient)=0.6A, S parameters, CW mode: Temp= -40°C Temp= +25°C Temp= +70°C Gain versus Frequency and Temperature (-40°C, +25°C and +70°C) dBS22 dBS11 Input and Output Return losses versus Frequency and Temperature Ref. DSCHA65179250 - 07 Sept 09 5/10 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz High Power Amplifier CHA6517 In test jig Measurements (one channel): Vd=8V, Id (Quiescient)=0.6A, Power measurements, CW mode Temp.=-40°C Temp.=+25°C Temp.=+70°C Output power versus Frequency and Temperature (Pin=+12dBm) Pin=-5dBm Pin=+12dBm Pin=+15dBm Pin=+17dBm Pin=+19dBm Gain versus Frequency and Input power (Temp.=+25°C) Ref. DSCHA65179250 - 07 Sept 09 6/10 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz High Power Amplifier CHA6517 Temp.=-40°C Temp.=+70°C Temp.=+25°C Output power versus Frequency and Temperature (Freq=18GHz) Temp.=-40°C Temp.=+25°C Temp.=+70°C Id current versus Frequency and Temperature (Pin=+17dBm) Ref. DSCHA65179250 - 07 Sept 09 7/10 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz High Power Amplifier CHA6517 3 745 6 2 3 470 3 270 4 5 7 3 145 2 945 1 11 2 075 2 075 121 1 820 825 10 9 8 2 150 13 14 15 1 750 16 955 755 22 20 19 1 840 1 990 18 120 130 000 000 17 4 200 21 1 290 630 430 4 190 985 120 3 900±35 3 4 200 3 770 4 195 1 840 1 990 1 290 120 Chip Mechanical Data and Pin references 4 320±35 Chip thickness = 70µm +/- 10µm HF pads (1, 7, 16, 22) = 118 x 196 DC pads = 96 x 96 Pin number 1, 22 2, 3, 4, 19, 20, 21 5, 9, 14, 18 11, 12 10, 13 6, 8, 15, 17 7, 16 Ref. DSCHA65179250 - 07 Sept 09 Pin name IN VG GND VD1 VD2 VD3 OUT 8/10 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Description Input RF port Negative supply voltage Ground (NC) Positive supply voltage Positive supply voltage Positive supply voltage Output RF port Specifications subject to change without notice 6-18GHz High Power Amplifier CHA6517 Assembly recommendations (one channel) For thermal and electrical considerations, the chip should be brazed on a metal base plate. The RF and DC connections should be done according to the following table: Port Connection IN (1, 22) OUT (7, 16) VD (6, 8, 10, 11, 12, 13, 15, 17 ) Inductance (Lbonding)=0.3nH Inductance (Lbonding)=0.3nH Inductance ≤1nH VG (2, 3, 4, 19, 20, 21) Inductance ≤1nH Ref. DSCHA65179250 - 07 Sept 09 9/10 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 External capacitor C1 ~ 22pF C3~ 1nF C4~100nF C2~ 120pF Specifications subject to change without notice 6-18GHz High Power Amplifier CHA6517 Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Ordering Information Chip form : CHA6517-99F/00 Elettronica S.p.A has the intellectual property of this MMIC and gives to United Monolithic Semiconductors S.A.S. non-exclusive license to sell it. Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. DSCHA65179250 - 07 Sept 09 10/10 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice