UMS DBES105A_09

DBES105a
RoHS COMPLIANT
Flip-Chip Dual Diode
GaAs Diode
Description
30
30
100
diameter 20
26
The DBES105a is a dual Schottky diode based
on a low cost 1µm stepper process including a
bump technology. The parasitic inductances are
reduced and result in a very high operating
frequency.
204
530
460
204
26
This flip-chip dual diode has been designed for
high performance mixer applications.
160
230
Main Features
■ High cut-off frequencies: 3THz
■ High breakdown voltage: < [email protected] 20µA
■ Good ideality factor: 1.2
■ Low parasitic inductances
■ Low cost technology
■ Dimensions : 0.53 x 0.23 x 0.1mm
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Typ
Unit
Wu
Gate Width
5
µm
Fco
Cut-off frequency
3
THz
n
BVak
Ideality factor
1.2
Anode-cathode break-down voltage
< -5
V
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSDBES105a6354 - 20 Dec 06
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Flip-Chip Dual Diode
DBES105a
Rp
Equivalent Circuit
Rs
Cj0
Cpar
Rs(Ω
Ω)
Cjo(fF) (0V)
Cpar(fF)
Fco(THz)
4.4
9.5
5.8
2.4
Fco = 1/(2π Rs [Cpar + Cjo])
Rp can be neglected
Absolute Maximum Ratings (1)
Tamb. = 25°C
Symbol
Parameter
Typ. values
Unit
Vak
Reverse anode-cathode voltage
-5
V
Iak
Forward anode-cathode current
10
mA
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Imax vs Tamb
12
10
I max( mA)
8
6
4
2
0
0
20
40
60
80
100
120
Tam b (°C)
Ref. : DSDBES105a6354 - 20 Dec 06
2/4
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
Flip-Chip Dual Diode
DBES105a
Typical DC Measurements
-4.0
-3.0
-2.0
-1.0
Voltage UD [V]
1E-01
UI-Characteristic
Current |ID| [A]
1E-02
1E-03
1E-04
Is = 3.5e-14 A
1E-05
1E-06
1E-07
1x5µm
1E-08
1E-09
1E-10
1E-11
0.00
0.25
0.50
0.75
1.00
Typical On-Wafer Measurements
Bias Conditions
Vak = 0V
Ref. : DSDBES105a6354 - 20 Dec 06
3/4
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
Flip-Chip Dual Diode
DBES105a
Mechanical data
30
30
100
diameter 20
26
204
460
530
204
26
160
230
Dimensions in µm
Dimensions: 230 ± 35 x 530 ± 35 µm
Thickness= 100µm ± 10 µm
Ordering Information
Chip form
:
DBES105a99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSDBES105a6354 - 20 Dec 06
4/4
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice