WHXPCB AO4403

万和兴电子有限公司 www.whxpcb.com
AO4403
30V P-Channel MOSFET
General Description
Product Summary
The AO4403 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.
ID (at VGS=-10V)
-30V
-6A
RDS(ON) (at VGS=-10V)
< 48mΩ
VDS
RDS(ON) (at VGS =-4.5V)
< 57mΩ
RDS(ON) (at VGS =-2.5V)
< 80mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
Bottom View
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Units
V
±12
V
-6
ID
TA=70°C
Maximum
-30
A
-5
Pulsed Drain Current C
IDM
Avalanche Current C
IAS, IAR
18
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
16
mJ
Power Dissipation B
Junction and Storage Temperature Range
Rev 7: Mar. 2011
3.1
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
-30
Steady-State
Steady-State
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
2
RθJA
RθJL
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Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4403
万和兴电子有限公司 www.whxpcb.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
Typ
-1
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.5
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-30
TJ=55°C
±100
nA
-0.9
-1.3
V
40
48
60
72
VGS=-4.5V, ID=-4A
45
57
mΩ
80
mΩ
-1
V
-3.5
A
780
pF
TJ=125°C
A
RDS(ON)
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-2A
60
gFS
Forward Transconductance
VDS=-5V, ID=-6A
19
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
-0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
645
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
µA
-5
VGS=-10V, ID=-6A
Coss
Units
V
VDS=-30V, VGS=0V
IDSS
Crss
Max
4
mΩ
S
80
pF
55
pF
7.8
Ω
12
7
VGS=-4.5V, VDS=-15V, ID=-6A
VGS=-10V, VDS=-15V, RL=2.5Ω,
RGEN=6Ω
nC
1.5
nC
2.5
nC
6.5
ns
3.5
ns
41
ns
9
ns
IF=-6A, dI/dt=100A/µs
11
Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs
3.5
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 7: Mar. 2011
www.aosmd.com
Page 2 of 5
AO4403
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
-10V
VDS=-5V
25
-4.5V
15
-3V
-ID(A)
-ID (A)
20
15
-2.5V
10
125°C
10
25°C
5
5
VGS=-2V
0
0
0
1
2
3
4
0
5
1
1.5
2
2.5
3
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
90
Normalized On-Resistance
1.8
VGS=-2.5V
70
RDS(ON) (mΩ
Ω)
0.5
VGS=-4.5V
50
30
VGS=-10V
10
VGS=-4.5V
ID=-4A
1.6
VGS=-10V
ID=-6A
1.4
17
5
2
VGS=-2.5V
10
I =-2A
1.2
D
1
0.8
0
2
4
6
8
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
100
1.0E+01
ID=-6A
1.0E+00
40
80
60
125°C
1.0E-01
-IS (A)
RDS(ON) (mΩ
Ω)
125°C
1.0E-02
25°C
1.0E-03
40
25°C
1.0E-04
1.0E-05
20
0
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 7: Mar. 2011
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO4403
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1200
VDS=-15V
ID=-6A
1000
Ciss
Capacitance (pF)
-VGS (Volts)
4
3
2
800
600
400
Coss
1
0
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0
100.0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
TJ(Max)=150°C
TA=25°C
10µs
100µs
1000
Power (W)
RDS(ON)
limited
10.0
-ID (Amps)
Crss
200
1ms
1.0
10ms
TJ(Max)=150°C
TA=25°C
0.1
1s
10s
DC
10
0.0
0.1
1
10
100
1
100
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
-VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 7: Mar. 2011
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Page 4 of 5
AO4403
万和兴电子有限公司 www.whxpcb.com
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 7: Mar. 2011
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5