WHXPCB AO4404B

万和兴电子有限公司 www.whxpcb.com
AO4404B
30V N-Channel MOSFET
General Description
Product Summary
The AO4404B uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device makes an
excellent high side switch for notebook CPU core DC-DC
conversion.
VDS
ID (at VGS=10V)
30V
8.5A
RDS(ON) (at VGS=10V)
< 24mΩ
RDS(ON) (at VGS = 4.5V)
< 30mΩ
RDS(ON) (at VGS = 2.5V)
< 48mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
D
Top View
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Units
V
±12
V
8.5
ID
TA=70°C
Maximum
30
7.1
A
Pulsed Drain Current C
IDM
60
Avalanche Current C
IAS, IAR
14
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
10
mJ
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 3: Dec 2011
3.1
PD
TA=70°C
Steady-State
Steady-State
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
2
RθJA
RθJL
Typ
31
59
16
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°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 6
AO4404B
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
VDS=0V, VGS= ±12V
Gate Threshold Voltage
VDS=VGS ID=250µA
0.65
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
60
VGS=10V, ID=8.5A
TJ=125°C
100
nA
1.05
1.45
V
17.7
24
28
34
A
19
30
mΩ
VGS=2.5V, ID=5A
24
48
mΩ
1
V
4
A
gFS
Forward Transconductance
VDS=5V, ID=8.5A
37
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
S
630
pF
75
pF
50
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
mΩ
VGS=4.5V, ID=8.5A
VSD
Crss
µA
5
Gate-Body leakage current
Units
V
1
IGSS
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=4.5V, VDS=15V, ID=8.5A
1.5
pF
3
4.5
6
7
Ω
nC
1.3
nC
1.8
nC
3
ns
VGS=10V, VDS=15V, RL=1.8Ω,
=1.8Ω,
RGEN=3Ω
2.5
ns
25
ns
4
ns
IF=8.5A, dI/dt=100A/µs
8.5
Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs
2.6
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: Dec 2011
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Page 2 of 6
AO4404B
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
15
10V
35
3V
VDS=5V
4.5V
12
30
2.5V
9
ID(A)
ID (A)
25
20
6
15
10
3
VGS=2V
25°C
125°C
5
0
0
0
1
2
3
4
0
5
30
1
1.5
2
2.5
3
Normalized On-Resistance
1.8
25
RDS(ON) (mΩ
Ω)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
20
15
VGS=10V
VGS=4.5V
ID=8.5A
1.6
1.4
17
5
VGS=10V
2
ID=8.5A
10
1.2
1
0.8
10
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
50
1.0E+01
ID=8.5A
1.0E+00
40
40
125°C
30
125°C
IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
25°C
1.0E-02
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
0.0
0
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 3: Dec 2011
0.2
0.4
0.6
0.8
1.0
2
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VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AO4404B
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
5
VDS=15V
ID=8.5A
800
Ciss
Capacitance (pF)
VGS (Volts)
4
3
2
600
400
Coss
1
200
0
0
Crss
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
30
100.0
TA=25°C
10µs
TA=150°C
10.0
RDS(ON)
limited
10.0
TA=100°C
ID (Amps)
IAR (A) Peak Avalanche Current
100.0
5
10V (Volts)
15
20
25
DS
Figure 8: Capacitance Characteristics
100µs
1ms
1.0
10ms
TA=125°C
10s
DC
TJ(Max)=150°C
TA=25°C
0.1
0.0
1.0
0.01
1
10
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 9: Single Pulse Avalanche capability (Note C)
0.1
100
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 3: Dec 2011
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Page 4 of 6
AO4404B
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 3: Dec 2011
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Page 5 of 6
AO4404B
万和兴电子有限公司 www.whxpcb.com
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 3: Dec 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6