万和兴电子有限公司 www.whxpcb.com AO4421 60V P-Channel MOSFET General Description Product Summary The AO4421 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-10V) -60V -6.2A RDS(ON) (at VGS=-10V) < 40mΩ RDS(ON) (at VGS = -4.5V) < 50mΩ VDS 100% UIS Tested 100% Rg Tested SO8 D Top View D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C B Junction and Storage Temperature Range Maximum Junction-to-Lead Rev 3: Nov 2010 C ±20 V ID -5 IDM -40 A 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V -6.2 TA=25°C Power Dissipation A Maximum -60 W 2 -55 to 150 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State www.aosmd.com RθJA RθJL Typ 24 54 21 °C Max 40 75 30 Units °C/W °C/W °C/W Page 1 of 4 万和兴电子有限公司 www.whxpcb.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -60 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -40 TJ=55°C 70 VGS=-4.5V, ID=-5A 40 50 VDS=-5V, ID=-6.2A 18 VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Gate resistance -0.74 2417 VGS=0V, VDS=-30V, f=1MHz µA nA V A 53 Forward Transconductance Rg -3 40 gFS Output Capacitance -2 32 Static Drain-Source On-Resistance Reverse Transfer Capacitance -5 ±100 VGS=-10V, ID=-6.2A RDS(ON) Units -1 Zero Gate Voltage Drain Current Crss Max V VDS=-48V, VGS=0V IDSS Coss Typ mΩ mΩ S -1 V -4.2 A 2900 pF 179 pF 120 pF 1.9 2.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) 46.5 55 nC Qg(4.5V) Total Gate Charge (4.5V) 22.7 nC 9.1 nC VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-30V, ID=-6.2A Qgs Gate Source Charge Qgd Gate Drain Charge 9.2 nC tD(on) Turn-On DelayTime 9.8 ns tr Turn-On Rise Time 6.1 ns VGS=-10V, VDS=-30V, RL=4.7Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 44 ns 12.7 ns trr Body Diode Reverse Recovery Time IF=-6.2A, dI/dt=100A/µs 34 Qrr Body Diode Reverse Recovery Charge IF=-6.2A, dI/dt=100A/µs 47 42 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Rev 3: Nov 2010 www.aosmd.com Page 2 of 4 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 25 -10V -4V -4.5V 20 -5V -3.5V -6V 20 15 -ID(A) -ID (A) VDS=-5V 25 15 10 10 125°C VGS=-3V 5 5 25°C 0 0 0 1 2 3 4 5 1 1.5 45 Normalized On-Resistance RDS(ON) (mΩ ) 2.5 3 3.5 4 2.00 VGS=-4.5V 40 35 VGS=-10V VGS=-10V ID=-6.2A 1.80 1.60 VGS=-4.5V ID=-5A 1.40 1.20 1.00 0.80 30 0 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 90 1.0E+00 ID=-6.2A 125°C 80 1.0E-01 70 125°C -IS (A) RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 60 1.0E-02 1.0E-03 50 1.0E-04 25°C 40 1.0E-05 25°C 30 1.0E-06 20 2 3 4 5 -VGS 6 (Volts) 7 8 9 10 Figure 5: On-Resistance vs. Gate-Source Voltage Rev 3: Nov 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 4 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 3500 10 VDS=-30V ID=-6.2A 3000 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 2500 2000 1500 1000 2 Coss Crss 500 0 0 0 10 20 30 40 50 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 40 50 60 100 1000 TJ(Max)=150°C TA=25°C RDS(ON) limited 100µs 1ms 0.1s 10µs 30 Power (W) -ID (Amps) 30 40 TJ(Max)=150°C, T A=25°C 1.0 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 10 10ms 1s 20 10 10s DC 0 0.1 0.1 1 10 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 Rev 3: Nov 2010 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.aosmd.com 100 1000 Page 4 of 4