WHXPCB AO4498E

万和兴电子有限公司 www.whxpcb.com
AO4498E
30V N-Channel MOSFET
General Description
Product Summary
The AO4498E combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=10V)
30V
18A
RDS(ON) (at VGS=10V)
< 5.8mΩ
RDS(ON) (at VGS = 4.5V)
< 8.5mΩ
VDS
ESD Protected
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 1: November 2009
Steady-State
Steady-State
A
3.1
W
2
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
V
14
PD
TA=70°C
±20
120
IDM
TA=25°C
Power Dissipation B
Units
V
18
ID
TA=70°C
Maximum
30
RθJA
RθJL
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Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4498E
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
ID=250µA, VGS=0V
Min
Typ
30
36
VDS=30V, VGS=0V
TJ=55°C
Units
V
1
µA
5
±10
µA
1.8
2.3
V
4.8
5.8
7.4
8.9
VGS=4.5V, ID=16A
6.8
8.5
mΩ
1
V
4
A
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
120
VGS=10V, ID=18A
RDS(ON)
Max
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=18A
50
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
mΩ
S
1840
2300
2760
pF
230
330
430
pF
145
240
340
pF
0.6
1.25
1.9
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
34
42
50
nC
Qg(4.5V) Total Gate Charge
16
20
24
nC
5.6
7
8.4
nC
6
10
14
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=18A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=18A, dI/dt=500A/µs
10
12.5
15
Qrr
Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs
22
27
32
VGS=10V, VDS=15V, RL=0.83Ω,
RGEN=3Ω
8
ns
10
ns
33
ns
8
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: November 2010
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Page 2 of 5
AO4498E
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
120
6V
10V
100
VDS=5V
4.5V
80
80
4V
ID(A)
ID (A)
60
60
40
3.5V
40
20
20
25°C
125°C
VGS=3V
0
0
0
1
2
3
4
5
0
1
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
12
Normalized On-Resistance
1.8
10
RDS(ON) (mΩ )
2
VGS=4.5V
8
6
4
VGS=10V
2
0
VGS=10V
ID=18A
1.6
1.4
17
5
VGS=4.5V
ID=16A 2
1.2
10
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
20
ID=18A
1.0E+01
40
15
10
IS (A)
RDS(ON) (mΩ )
1.0E+00
125°C
1.0E-01
1.0E-02
5
125°C
25°C
1.0E-03
25°C
1.0E-04
0
2
4
6
8
10
1.0E-05
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: November 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO4498E
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
10
VDS=15V
ID=18A
3000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
2500
2000
1500
1000
Coss
2
500
0
5
10
15
20
25
30
35
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
45
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
TA=25°C
100.0
10µs
RDS(ON)
limited
1000
100µs
1.0
1ms
0.1
10s
Power (W)
10.0
5
10000
1000.0
ID (Amps)
Crss
0
0
10ms
TJ(Max)=150°C
TA=25°C
100
10
DC
0.0
0.01
0.1
1
VDS (Volts)
10
100
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: November 2010
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Page 4 of 5
AO4498E
万和兴电子有限公司 www.whxpcb.com
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D io d e R eco very T est C ircu it & W a vefo rm s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 1: November 2010
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5