WILLAS SOT-323 Plastic-Encapsulate Diodes FM120-M+ BAW56W THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline SWITCHING DIODE Features • Batch process design, excellent power dissipation offers FEATURES SOT-323 better reverse leakage current and thermal resistance. SOD-123H z• Low Fast Switching Speedapplication in order to profile surface mounted optimize board space. For General Purpose Switching Applications • Low power loss, high efficiency. z• High High Conductance current capability, low forward voltage drop. z• High surge capability. Pb-Free package is available for overvoltage protection. • Guardring RoHS product for packing code suffix ”G” • Ultra high-speed switching. Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon z 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1 Moisture Sensitivity Level 1 standards of z• Lead-free parts meet environmental 3 MIL-STD-19500 /228 2 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MARKING: KJC Mechanical data Maximum Ratings @Ta=25℃ • Epoxy : UL94-V0 rated flame retardant plastic, SOD-123H • Case : Molded Parameter Symbol , • Terminals :Plated terminals, solderable per MIL-STD-750 VRM Non-Repetitive Peak Reverse Voltage ina ry 0.040(1.0) 0.024(0.6) Method 2026 Limit 0.031(0.8) Typ. Unit 0.031(0.8) Typ. 100 V VRRM Peak Repetitive Peak Reverse Voltage • Polarity : Indicated by cathode band Working Peak Reverse Voltage Position : Any • Mounting DC Blocking • Weight : Voltage Approximated 0.011 gram Dimensions in inches and (millimeters) VRWM 75 V VR VR(RMS) RMS Reverse Voltage 53 V 300 mA 150 mA im MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS IFM Forward Continuous Current Ratings at 25℃ ambient temperature unless otherwise specified. Average Current Single phaseRectified half wave,Output 60Hz, resistive of inductive load. IO For capacitive load,Surge derate Current current by@t=1.0μs 20% Peak Forward Marking Code @t =1.0s Power Dissipation Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Thermal Resistance Junction to Ambient 14 200 40 15 50 16 60 18 80 10 mW 100 115 150 120 200 Volts 14 21 28 35 42 56 70 105 140 Volts Tj 20 30 40 150 50 60 80 100℃ 150 200 Volts RθJA IO TSTG IFSM RΘJA Symbol CJ Typical Junction Capacitance (Note 1) Reverse breakdown voltage V (BR) TJ Operating Temperature Range Storage Temperature Range Forward voltage CHARACTERISTICS Min 625 -55~+150 Typ Max 75-55 to +125 ℃/W ℃ 1.0 30 Amps Conditions Unit 40 V 120 0.715 V - 65 to +175 IF=1mA VF2 0.855 V IF=10mA V V I =50mA 1.25 V 0.5 IF=150mA IR1 2.5 μA 10 VR=75V IR2 25 nA VR=20V CT 2 pF VR=0V,f=1MHz @T A=125℃ Reverse current NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2012-06 2012-1 IR trr 0.50 1.0 VF4 Reverse recovery time ℃ ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ Capacitance between terminals PF I =2.5μA VFF3 2- Thermal Resistance From Junction to Ambient ℃/W -55Rto +150 Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage Amps VF1 TSTG 13 30 Storage Temperature Maximum Average Forward Rectified Current Typical Thermal Resistance (Note 2) Parameter A 20 VDC Peak Forward Surge Current 8.3 ms single half sine-wave Electrical Ratings @Ta=25℃ superimposed on rated load (JEDEC method) Pd 12 Junction Maximum DC Temperature Blocking Voltage 2.0 SYMBOL FM120-MH FM130-MH FM140-MH 1.0 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Pr el RATINGS IFSM 4 0.70 ns F 0.85 0.9 0.92 Volts mAmps IF=IR=10mA Irr=0.1XIR,RL=100Ω WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS SOT-323 Plastic-Encapsulate Diodes FM120-M+ BAW56W THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-323 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) MIL-STD-19500 /228 Halogen free product for packing code suffix "H" • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. ina Method 2026 0.040(1.0) 0.024(0.6) ry .054(1.35) .045(1.15) Mechanical data .004(0.10)MIN. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" .087(2.20) • Epoxy : UL94-V0 rated flame retardant .070(1.80) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .096(2.45) .078(2.00) Pr eli m Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .056(1.40) Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 Maximum RMS Voltage VRMS 14 21 28 35 Maximum DC Blocking Voltage VDC 20 30 40 50 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range .010(0.25) 18 10 .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Recurrent Peak Reverse Voltage .047(1.20) 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.012(0.3) Typ. 80 100 115 150 120 200 Volts 42 56 70 105 140 Volts 60 80 100 150 200 Volts 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage IR .016(0.40) .008(0.20) @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .043(1.10) .032(0.80) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmp 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.DCORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP.