WILLAS FM120-M+ BC807-40WT1 THRU FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. PNP Silicon • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) • High current capability, low forward voltage drop. RoHS product for packing code suffix "G" • High surge capability. Halogen free forprotection. packing code suffix "H" for product overvoltage • Guardring • Ultra high-speed switching. DEVICE MARKING AND ORDERING INFORMATION • Silicon epitaxial planar chip, metal silicon junction. Marking Package Lead-free parts meet environmental standards ofShipping •Device 0.012(0.3) Typ. z 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 SOT–323 code suffix "G" • RoHS product for packing BC807-40WT1 SOT-323 YL Halogen free product for packing code suffix "H" 3000/Tape&Reel Mechanical data MAXIMUM RATINGS 0.040(1.0) 0.024(0.6) Collector–BaseMethod Voltage 2026 V CBO –50 0.031(0.8) Typ. –500 V im ina –5.0 Position : Any • Mounting Collector Current — Continuous IC • Weight : Approximated 0.011 gram 0.031(0.8) Typ. 1 BASE V Emitter–Base Voltage by cathode V EBO • Polarity : Indicated band 3 COLLECTOR ry • Epoxy : UL94-V0 rated flame retardant Rating Symbol Value Unit • Case : Molded plastic, SOD-123H Collector–Emitter Voltage V CEO –45 V, • Terminals :Plated terminals, solderable per MIL-STD-750 Dimensions in inches and (millimeters) 2 EMITTER mAdc THERMAL CHARACTERISTICS MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Characteristic Symbol Ratings at 25℃ ambient temperature unless otherwise specified. Total Device Dissipation FR– 5 Board, (1) PD Single phase half wave, 60Hz, resistive of inductive load. TA = 25°C For capacitive load, derate current by 20% Derate above 25°C Total Device Dissipation Maximum Recurrent Peak Reverse Voltage Alumina Substrate, (2) TA = 25°C Maximum RMSabove Voltage Derate 25°C Maximum DC Blocking Voltage Thermal Resistance, Junction to Ambient Junction and Storage Temperature Maximum Average Forward Rectified Current 225 1.8 mW mW/°C VRRM R θJA P D 12 20 VRMS 14 556 13 30 300 212.4 30417 °C/W 15 50 mW 28 mW/°C 35 40 °C/W50 14 40 VDC R θJA 20 IO T J , T stg –55 to +150 (TA = 25°C unless otherwise noted.) ELECTRICAL CHARACTERISTICS Peak Forward Surge Current 8.3 ms single half sine-wave IFSM superimposed on rated load (JEDEC method) Characteristic Typical Thermal Resistance (Note 2) Symbol RΘJA OFFJunction CHARACTERISTICS Typical Capacitance (Note 1) CJ Operating Temperature Range Collector–Emitter Breakdown Voltage TJ Storage Temperature Range (IC = –10 mA) Collector–Emitter Breakdown Voltage CHARACTERISTICS 10 100 115 150 120 200 42 56 70 105 140 80 100 150 200 60 1.0 30 Typ Max 40 120 –45 18 80 Unit -55 to +150 -— 65 to +175V — IR V (BR)CES –50 0.50 — 0.70 — V — 10 (VCB = –20 V) — — –100 nA (VCB = –20 V, T J = 150°C) — — –5.0 µA @T A=125℃ NOTES:Collector Cutoff Current 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.9 0.92 — (IE = –1.0 µA) 0.85 0.5 –5.0 Rated DC Blocking Voltage SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Average Reverse Current at @T A=25℃ Emitter–Base Breakdown Voltage Min 16 60 °C -55 to +125 TSTGV (BR)CEO VF Maximum at 1.0A DC (VEBForward = 0, I CVoltage = –10µA) Unit SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Pr el RATINGS Thermal Resistance, Junction to Ambient Marking Code Max V (BR)EBO V I CBO 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC807-40WT1 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and resistance. ELECTRICAL CHARACTERISTICS (TAthermal = 25°C unless otherwise noted) (Continued) SOD-123H • Low profile surface mounted application in order to optimize board Characteristic space. Symbol • Low power loss, high efficiency. High current capability, low forward voltage drop. ON •CHARACTERISTICS • High surge capability. DC Current Gain • Guardring for overvoltage protection. (IC= –100 mA, VCE = –1.0 V) high-speed switching. • Ultra • Silicon epitaxial planar chip, metal silicon junction. (IC = –500 mA, VCE = –1.0 V) parts meet environmental standards of • Lead-free Min Typ Max Unit 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. h FE — 250 — 600 40 — — 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 product for packing code suffix "G" • RoHS Collector–Emitter Saturation Voltage V CE(sat) Halogen free product for packing code suffix "H" (I = –500 mA, I = –50 mA) Mechanical data C — — –0.7 — — –1.2 V B SMALL–SIGNAL CHARACTERISTICS Method 2026 V 0.031(0.8) Typ. 0.031(0.8) Typ. in inches and (millimeters) 100 Dimensions— — MHz im ina Current–Gain — Bandwidth Product • Polarity : Indicated by cathode band (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) • Mounting Position : Any Output Capacitance • Weight : Approximated 0.011 gram (VCB = –10 V, f = 1.0 MHz) 0.040(1.0) 0.024(0.6) ry Base–Emitter On Voltage : UL94-V0 rated flame retardant • Epoxy V BE(on) mA, Vplastic, CE= –1.0 V) (IC = –500 : Molded SOD-123H • Case , • Terminals :Plated terminals, solderable per MIL-STD-750 fT — C obo 10 — pF MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Pr el Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC807-40WT1THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors Pb Free Produc SOD-123+ PACKAGE Package outline Features SOT−323 offers • Batch process design, excellent power dissipation better reverse leakage current and thermal resistance. SOD-123H .004(0.10)MIN. • Low profile surface mounted application in order to optimize board space. .054(1.35) .045(1.15) • Low power loss, high efficiency. voltage drop. • High current capability, low forward.087(2.20) • High surge capability. .070(1.80) • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ry 0.031(0.8) Typ. Method .056(1.40) 2026 • Polarity : Indicated.047(1.20) by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .010(0.25) .003(0.08) im ina Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage VRRM .016(0.40) VRMS .008(0.20)VDC IO Maximum Average Forward Rectified Current 12 20 Pr el RATINGS Marking Code Peak Forward Surge Current 8.3 ms single half sine-wave 14 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. .004(0.10)MAX. For capacitive load, derate current by 20% 1.0 30 IFSM Dimensions in inches and (millimeters) superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range CHARACTERISTICS Maximum Forward Voltage at 1.0A DC @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012- -55 to +150 - 65 to +175 0.5 IR 10 1.9 0.075 0.9 0.035 0.7 0.028 2012-06 -55 to +125 0.65 0.025 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.65 SYMBOL FM120-MH FM130-MH 0.025 0.9 0.92 VF 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ 40 120 SOLDERING FOOTPRINT* TSTG Rated DC Blocking Voltage SCALE 10:1 mm inches WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.