WILLAS BC817-xxLT1 General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage V CEO 45 V Collector–Base Voltage V CBO 50 V Emitter–Base Voltage V EBO 5.0 V IC 500 mAdc im ina Collector Current — Continuous SOT–23 ry Rating THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR– 5 Board, (1) Unit 225 1.8 556 mW mW/°C °C/W 300 2.4 417 –55 to +150 mW mW/°C °C/W °C PD R θJA PD Pr el TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Max 3 COLLECTOR R θJA T J , T stg 1 BASE 2 EMITTER DEVICE MARKING BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V (BR)CEO 45 — — V V (BR)CES 50 — — V V 5.0 — — V (VCB = 20 V) — — 100 nA (VCB = 20 V, TA = 150°C) — — 5.0 µA OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Emitter Breakdown Voltage (VEB = 0, IC = 10 µA) Emitter–Base Breakdown Voltage (I E = 1.0 µA) Collector Cutoff Current (BR)EBO I CBO 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012- WILLAS ELECTRONIC CORP. WILLAS BC817-xxLT1 General Purpose Transistors ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C= 100 mA, V CE = 1.0 V) h FE BC817–16 BC817–25 BC817–40 100 160 250 40 (I C = 500 mA, V CE = 1.0 V) Collector–Emitter Saturation Voltage (I C = 500 mA, I B = 50 mA) Base–Emitter On Voltage SMALL–SIGNAL CHARACTERISTICS Output Capacitance (V CB = 10 V, f = 1.0 MHz) ORDERING INFORMATION — 0.7 V V BE(on) — — 1.2 V fT 100 — — MHz C obo — 10 — pF Marking Shipping BC817-16LT1 6A 3000/Tape&Reel BC817-25LT1 6B 3000/Tape&Reel Pr el Device — im ina Current–Gain — Bandwidth Product ( I C = 10 mA, V CE = 5.0 V dc, f = 100 MHz) 250 400 600 — V CE(sat) ry ( I C = 500 mA, V CE = 1.0 V) — — — — BC817-40LT1 2012- 6C 3000/Tape&Reel WILLAS ELECTRONIC CORP. WILLAS BC817-xxLT1 General Purpose Transistors .008(0.20) .003(0.08) Pr eli m .080(2.04) .070(1.78) ina ry .110(2.80) .063(1.60) .047(1.20) .122(3.10) .106(2.70) .083(2.10) .006(0.15)MIN. SOT-23 .020(0.50) .012(0.30) .055(1.40) .035(0.89) .004(0.10)MAX. Dimensions in inches and (millimeters) 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012- inches mm WILLAS ELECTRONIC CORP.