WILLAS FM120-M+ BCW68GLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers PNPbetter Silicon reverse leakage current and thermal resistance. • • SOD-123H • Low profile surface mounted application in order to RoHS product for packing code suffix "G", optimize board space. Halogen free product for packing code suffix "H" loss, high efficiency. • Low power 0.146(3.7) 0.130(3.3) . • High: current Weight 0.008g capability, low forward voltage drop. 0.012(0.3) Typ. • High surge capability. ORDERING INFORMATION for overvoltage protection. • Guardring Device Marking Shipping high-speed switching. • Ultra • Silicon epitaxial planar chip, metal silicon junction. 3000/Tape&Reel BCW68GLT1 environmental standards of • Lead-free parts meetDG 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS Mechanical data SOT–23 Rating Symbol Unit : UL94-V0 rated flame retardant Value • Epoxy – 45 Vdc Collector–Emitter Voltage V CEO plastic, SOD-123H • Case : Molded , Collector–Base Voltage terminals,Vsolderable – MIL-STD-750 60 Vdc • Terminals :Plated per CBO Method 2026 Emitter–Base Voltage V EBO • Polarity : Indicated by cathode band Collector Current — Continuous IC • Mounting Position : Any – 5.0 Vdc – 800 mAdc 0.040(1.0) 0.024(0.6) 3 0.031(0.8) Typ. COLLECTOR 0.031(0.8) Typ. 1 Dimensions in inches BASE and (millimeters) 2 EMITTER • Weight : Approximated 0.011 gram THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Total Device Dissipation FR– 5 Board, (1) Ratings at 25℃ ambient temperature unless otherwise specified. PD 225 mW TA = 25°C Single phase half wave, 60Hz, resistive of inductive load. 1.8 mW/°C Derate above 25°C For capacitive load, derate current by 20% Thermal Resistance, Junction to Ambient RθJA 556 °C/W SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS Total Device Dissipation PD 12 Marking Code Substrate, (2) T = 25°C 13300 14 mW 15 16 18 10 115 120 Alumina A 2.4 mW/°C 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V RRM Derate above 25°C 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS RθJA Thermal Resistance, Junction to Ambient 417 °C/W Maximum DC Blocking Voltage 60 80 100 150 200 Junction and Storage Temperature –5530to +150 40 °C 50 VDC TJ , Tstg20 Characteristic IO IFSM OFFThermal CHARACTERISTICS Typical Resistance (Note 2) RΘJA Maximum Average Forward Rectified Current Typ 1.0 30 Max – 45 — 40 120 — – 60 — ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) TypicalCollector–Emitter Junction Capacitance (Note 1)Voltage (IC = –10 mAdc, CJ IB = 0 ) Breakdown TJ Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0 ) Operating Temperature Range Storage Temperature Range TSTG Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0) Collector Cutoff Current CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ (VCE = –45 Vdc, I B= 0 , TA = 150°C) Rated DC Blocking Voltage @T A=125℃ Emitter Cutoff Current (VEB = – 4.0 Vdc, I C = 0) Min V (BR)CEO -55 to +125 V (BR)CES V (BR)EBO – 5.0 Unit Vdc — Vdc - 65 to +175 — — Vdc -55 to +150 I CES FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH VF Maximum Voltage (VCEForward = –45 Vdc, I E= at 0 )1.0A DC Symbol 0.50 IR I EBO — 0.70 — — — — — – 20 0.5 – 10 10 – 20 0.85 nAdc 0.9 µAdc 0.92 nAdc NOTES: 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 1- Measured at 1 voltage of 4.0 VDC. 2. Alumina = MHZ 0.4 xand 0.3applied x 0.024reverse in. 99.5% alumina. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCW68GLT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H surface mounted application order otherwise to • Low profile ELECTRICAL CHARACTERISTICS (TA = 25°Cinunless noted) (Continued) optimize board space. Symbol high efficiency. • Low power loss,Characteristic ON CHARACTERISTICS • High current capability, low forward voltage drop. DC Current Gain hFE surge capability. • High for overvoltage protection. • Guardring ( IC= –10 mAdc, VCE = –1.0 Vdc ) switching. • Ultra ( IC= high-speed –100 mAdc, V CE = –1.0 Vdc ) epitaxial chip,Vdc metal • Silicon ( IC= –300 mAdc,planar VCE = –1.0 ) silicon junction. parts meet environmental • Lead-free Collector–Emitter Saturation Voltage standards of MIL-STD-19500 /228 ( IC = – 300 mAdc, IB = –30 mAdc ) product for packing code suffix "G" • RoHS Base–Emitter Saturation Voltagecode suffix "H" Halogen free product for packing ( I = – 500 mAdc, I = –50 mAdc ) C B Mechanical data Min Max Typ Unit 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. — 120 160 60 — — — 400 — — V CE(sat) — — – 1.5 Vdc V BE(sat) — — – 2.0 Vdc 0.071(1.8) 0.056(1.4) SMSMALL–SIGNAL rated flame retardant • Epoxy : UL94-V0CHARACTERISTICS 0.040(1.0) 0.024(0.6) Current–Gain — Bandwidth Product f 100 T • Case : Molded plastic, SOD-123H (I C = –20mAdc, V CE = –10 Vdc, f = 100 MHz) , • Terminals :Plated terminals, solderable per MIL-STD-750 Output Capacitance — — MHz 0.031(0.8) Typ. 0.031(0.8) Typ. C obo — C ibo — — 105 pF NF (V CE = – 5.0 Vdc, I C = – 0.2 mAdc, R S = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz) — — 10 dB Vdc, I E2026 = 0, f = 1.0 MHz) (V CB = – 10Method Polarity : Indicated by cathode band Input Capacitance • Vdc, I C: =Any 0, f = 1.0 MHz) (V EB = –0.5 Position • Mounting Noise Figure • Weight : Approximated 0.011 gram — 18 pF Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCW68GLT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOT-23 to • Low profile surface mounted application in order SOD-123H optimize board space. .063(1.60) .047(1.20) MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) .006(0.15)MIN. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. .122(3.10) • Ultra high-speed switching. junction. • Silicon epitaxial planar chip, metal silicon .106(2.70) • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" .110(2.80) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .083(2.10) Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 .008(0.20) • Polarity : Indicated by cathode band .080(2.04) • Mounting Position : Any .070(1.78) • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .003(0.08) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .004(0.10)MAX. RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) 12 20 13 30 VRMS 14 21 20 30 VDC .020(0.50) IO .012(0.30) superimposed on rated load (JEDEC method) VRRM IFSM 14 40 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 15 50 Storage Temperature Range 10 100 115 150 120 200 28 35 42 56 70 105 140 50 60 80 100 150 200 1.0 30 40 120 -55 to +125 TJ 18 80 40 Dimensions RΘJAin inches and (millimeters) CJ Operating Temperature Range 16 60 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0.037 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH 0.037 0.95 VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 0.95 0.50 0.70 0.85 0.9 0.92 0.5 IR 10 NOTES: 0.079 2.0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.035 0.9 0.031 0.8 2012-06 2012- inches mm WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.