WILLAS FM120-M+ DS751-40WBTHRU WBFBP-02C Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers • Batch Diode Schottky barrier better reverse leakage current and thermal resistance. DESCRIPTION • Low profile surface mounted application in order to optimize board space. Silicon epitaxial planar • Low power loss, high efficiency. SOD-123H WBFBP-02C 0.146(3.7) (1.0×0.6×0.5) 0.130(3.3) unit: mm • High current capability, low forward voltage drop. • High surge capability. FEATURES • Guardring for overvoltage protection. z Small •surface mounting type Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. • z Low reverse current and low forward voltage • Lead-free parts meet environmental standards of z High reliability MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" APPLICATION Mechanical data High speed switching for detection • Epoxy : UL94-V0 rated flame retardant For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, : Molded plastic, SOD-123H • Case , DVD-ROM, Note book PC,terminals, etc.) • Terminals :Plated solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ina ry 0.031(0.8) Typ. Pb-Free package Method is available 2026 • Polarity : Indicated by cathode band ”G” RoHS product for packing code suffix Dimensions in inches and (millimeters) • Mounting Position : Any • Weight : Approximated 0.011 gram MARKING: 5 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Halogen free product for packing code suffix “H” im Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Symbol VRRM 12 20 13 30 VRMS 14 21 28 VDC 20 30 40 Pr el Parameter Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Peak reverse voltage VRM DCMaximum reverseAverage voltageForward Rectified Current VR I O Maximum DC Blocking Voltage 14 15 40 Limits50 Typical Junction Capacitance (Note 1) Operating Temperature Range Thermal Resistance from RθJA Storage Temperature Range 115 150 120 200 56 70 105 140 80 100 150 200 V V mA 40 120 mA -55 to +150 mW - 65 to +175 1000 ℃/W SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC Junction temperature 10 100Unit 1.0 30 100 TSTG CHARACTERISTICS Junction to Ambient Maximum Average Reverse Current at @T A=25℃ -55 to +125 TJ PD 42 60 150 CJ Power dissipation Rated DC Blocking Voltage Storage temperature RΘJA IFSM 35 50 30 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 18 80 30 Peak Forward Surge Current 8.3 ms single half sine-wave Mean rectifying current IO IFSM Peak forward surge current 40 16 60 Tj VF @T A=125℃ Tstg 0.50 0.70 15 0.85 0.5 IR -55~+150 10 ℃ 0.9 0.92 ℃ NOTES: Electrical Ratings @Ta=25℃ 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Parameter Symbol Min Typ Max Unit Conditions Forward voltage VF 0.37 V IF=1mA Reverse current IR 0.5 μA VR=30V Capacitance between terminals CT 2012-06 2012-11 2 pF VR=1V,f=1MHZ WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DS751-40WBTHRU WBFBP-02C Plastic-Encapsulate Diodes FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features Outline Drawing WBFBP-02C • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .017(0.45)REF. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .018(0.45) .012(0.30) Halogen free product for packing code suffix "H" .000(0.01)REF. Mechanical data 0.040(1.0) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.024(0.6) .010(0.25) 0.031(0.8) Typ. ry 0.031(0.8) Typ. .014(0.35) .010(0.25) Dimensions in inches and (millimeters) ina .026(0.65) .022(0.55) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .014(0.35) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr eli m .041(1.05) RATINGS Marking Code .0016(0.400)REF. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 .004(0.10) 21 28 Maximum DC Blocking Voltage VDC 20 30 40 .000(0.01) Maximum Average Forward Rectified Current IO IFSM .037(0.95) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range TSTG CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 14 40 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC 13 30 .022(0.55) .018(0.45) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% @T A=125℃ 0.50 0.70 0.85 0.9 0.5 IR 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) Rev.B 2012-06 2012-11 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.