WILLAS FM120-M+ DTA114ECA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Features • Low power loss, high efficiency. optimize board space. • 0.146(3.7) 0.130(3.3) current capability, low forward voltage drop. • High Pb-Free package is available • High surge capability. RoHS product for packing code suffix ”G” • Guardring for overvoltage protection. Halogen free productswitching. for packing code suffix “H” high-speed • Ultra Epoxy• Silicon meetsepitaxial UL 94 V-0 flammability planar chip, metal rating silicon junction. Moisure Sensitivity Level 1 • Lead-free parts meet environmental standards of SOT-23 /228 Built-inMIL-STD-19500 bias resistors enable the configuration of an inverter circuit product for packing input code suffix "G" • RoHS without connecting external resistors Halogen free product for packing code suffix "H" with complete The bias resistors consist of thin-film resistors Mechanical data isolation to allow negative biasing of the input. They also have the advantage UL94-V0completely rated flameeliminating retardant parasitic effects. • Epoxyof: almost Only the on/off conditions need to be set for operation, making • Case : Molded plastic, SOD-123H device design easy , • Terminals :Plated terminals, solderable per MIL-STD-750 • • .122(3.10) .106(2.70) .063(1.60) .047(1.20) • • • 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .080(2.04) .070(1.78) Method 2026 Absolute• maximum ratings 25кband Polarity : Indicated by @ cathode .110(2.80) For capacitive load, derate current by 20% RATINGS Electrical Characteristics @ 25к Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 12 Symbol Parameter Min Typ Max 20 Maximum Recurrent Peak Reverse Voltage VRRM VI(off) -0.5 ----Input voltage (VCC=-5V, IO=-100A) Maximum RMS Voltage(VO=-0.3V, IO=-10mA) VRMS --- 14 -3.0 V --I(on) VMaximum Output voltage = (IO/II -10mA/-0.5mA ---VDC --- 20 -0.3 O(on) DC Blocking Voltage II = Input current (VI -5V) -----0.88 Average Forward IMaximum =-50V, Current VI 0) --- IO ---0.5 Output current (VRectified O(off) CC= GI DC current gain (VO=-5V, = IO -5mA) 30 ----Peak Forward Surge Current 8.3 ms single half sine-wave R1 Input resistance 7.0IFSM 10 13 on rated load (JEDEC method) Rsuperimposed Resistance ratio 0.8 1.0 1.2 2/R1 Typical Thermal Resistance (Note 2) RΘJA Transition frequency fT --250 --(VO=-10V, IO=5mA,(Note f=100MHz) Typical Junction Capacitance 1) CJ Operating Temperature Range Storage Temperature Range TJ 13 Unit 30 V 21 V 30 V mA A 14 40 15 50 16 60 115 150 120 200 42 18 .008(0.20) 10 80 .003(0.08) 100 56 70 28 35 105 140 40 50 60 80 150 200 K¡ .004(0.10)MAX.1.0 30 MHz 40 120 -55 to +125 TSTG 100 .055(1.40) .035(0.89) .083(2.10) .006(0.15)MIN. Dimensions in inches and (millimeters) Symbol Parameter Min Typ Max Unit Position : Any • Mounting VCC Supply voltage ---50 --V VIN Input voltage -40 --10 V • Weight : Approximated 0.011 gram -50 IO Output current ----mA IC(MAX) -100 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pd Power dissipation --200 --mW Ratings atJunction 25℃ ambient temperature unless otherwise Tj temperature --- specified. 150 --ć Single phase half temperature wave, 60Hz, resistive of inductive-55 load. --T Storage 150 ć stg .020(0.50) .012(0.30) -55 to +150 Dimensions in inches and (millimeters) - 65 to +175 CHARACTERISTICS FM180-MHSolder FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH Suggested MARKING: 14VF Maximum Average Reverse Current at @T A=25℃ IR @T A=125℃ Rated DC Blocking Voltage Maximum Forward Voltage at 1.0A DC NOTES: 0.50 0.70 0.85 Pad Layout 0.92 .800 10 .035 .900 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.9 0.5 .031 .079 2.000 2- Thermal Resistance From Junction to Ambient inches mm .037 .950 .037 .950 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA114ECATHRU PNP Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Typical Characteristics Package outline Features excellent power dissipation offers • Batch process design, ON Characteristics INPUT VOLTAGE -0.3 OFF Characteristics SOD-123H -10 (mA) -3 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. -1 IO VI(ON) (V) better reverse leakage current and thermal resistance. V =-0.3V • Low profile surface mounted application inOorder to optimize board space. -30 • Low power loss, high efficiency. • High current capability, low forward voltage drop. -10 • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. Ta=25 ℃ -3 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of Ta=100℃ MIL-STD-19500 /228 -1 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" OUTPUT CURRENT -100 Mechanical data 0.071(1.8) 0.056(1.4) Ta=100℃ -0.3 Ta=25℃ -0.1 -0.03 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant -0.1 : Molded -1plastic, -3SOD-123H • Case -0.3 -30 -0.1 -10 -100 , OUTPUTterminals, CURRENT I solderable (mA) • Terminals :Plated per MIL-STD-750 VCC=-5V -0.01 -0.0 0.031(0.8) Typ. -0.4 O -0.8 -1.2 INPUT VOLTAGE VI(OFF) -1.6 0.031(0.8) -2.0 Typ. (V) Method 2026 • Polarity : Indicated by cathode band —— IO • Mounting Position G: Any I 1000 • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) VO=-5V IO/II=20 T =100℃ a RATINGS 30 (mV) VO(ON) -300 T =100℃ OUTPUT VOLTAGE DC CURRENT GAIN GI Ratings at 25℃ ambient temperature unless otherwise specified. 100 phase half wave, 60Hz, resistive of inductive load. Single For capacitive load, derate current by 20% a -100 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH Ta=25℃ Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 10 3 IO Peak Forward Surge Current 8.3 ms single half sine-wave 1 -0.3 -3 -0.1 -1 -10 -30IFSM 13 30 21 30 14 40 -30 15 50 16 60 18 80 superimposed on rated load (JEDEC method) OUTPUT CURRENT Typical Thermal Resistance (Note 2) (mA) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range CO Storage 12 Temperature Range TJ —— VR 35 42 56 70 105 140 60 80 100 150 200 1.0 30 -10 (mW) (pF) IR PD @T A=125℃ CO OUTPUT CAPACITANCE OUTPUT CURRENT 40 120 -100 -30 IO (mA) -55 to +150 PD —— Ta - 65 to +175 400 NOTES: 6 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. -3 -55 to +125 VF Maximum Average Reverse Current at @T A=25℃ -1 350 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH Maximum Forward Voltage at 1.0A DC 8 Rated DC Blocking Voltage 120 200 f=1MHz Ta=25℃ CHARACTERISTICS 10 115 150 50 TSTG 100 28 RΘJA POWER DISSIPATION IO -10 -100 Ta=2510 ℃ 40 Maximum Average Forward Rectified Current IO MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 300 VO(ON) —— -1000 2- Thermal Resistance From Junction to Ambient 4 0.50 0.70 0.92 m 10 250 200 0.9 0.85 0.5 300 DTA114ECA 150 100 2 50 0 0 2012-06 2012-0 4 8 12 REVERSE BIAS VOLTAGE 16 VR (V) 20 0 0 25 50 75 100 125 150 T (℃ELECTRONIC ) WILLAS CORP AMBIENT TEMPERATURE a WILLAS ELECTRONIC CORP.