WILLAS FM120-M DTA114TUA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to • • x x x 0.146(3.7) 0.130(3.3) Pb-Free package is available • High current capability, low forward voltage drop. RoHS product for packing capability.code suffix ”G” • High surge Guardring for protection. • Halogen free productovervoltage for packing code suffix “H” high-speed switching. • UltraUL Epoxy meets 94 V-0 flammability rating • Silicon epitaxial planar chip, metal silicon junction. Moisure Sensitivity Level 1 meet environmental standards of • Lead-free Built-in bias resistorsparts enable the configuration of an inverter circuit MIL-STD-19500 /228 without connecting external input resistors (see equivalent circuit) suffix "G" • RoHS product for packing code The bias resistors consist of thin-film resistors Halogen free product for packing code suffixwith "H" complete isolation to allow negative biasing of the input. They also have the Mechanical data advantage of almost completely eliminating parasitic effects : UL94-V0 need rated flame • Epoxy Only the on/off conditions to be retardant set for operation, making Case : Molded plastic, SOD-123H • device design easy , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) • .004(0.10)MIN. SOT-323 optimize board space. Features• Low power loss, high efficiency. 0.040(1.0) .010(0.25) 0.024(0.6) .003(0.08) 0.031(0.8) Typ. 0.031(0.8) Typ. .087(2.20) Dimensions in inches and.070(1.80) (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any Absolute Maximum Ratings • Weight : Approximated 0.011 gram Value Parameter Symbol .054(1.35) .045(1.15) Method 2026 Unit Collector-Base Voltage VCBO -50 V AND ELECTRICAL CHARACTERISTICS Collector-Emitter Voltage MAXIMUM RATINGS VCEO -50 V Ratings at 25℃ ambient temperature Emitter-Base voltage VEBO unless otherwise -5 specified. V Collector Current-Continuous IC of inductive -100 mA Single phase half wave, 60Hz, resistive load. Collector Dissipation For capacitive load, derate current P by C 20% Junction Temperature Range RATINGS TJ Marking Code Storage Temperature Range TSTG Maximum Recurrent Peak Reverse Voltage 200 .047(1.20) FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M -55~150 SYMBOL FM120-MHк -55~150 VRRM 12 20 к 13 30 14 40 15 50 16 60 18 80 42 .004(0.10)MAX. 60 VRMS 14 21 28 35 Maximum DC Blocking Voltage VDC 20 30 40 50 Maximum Average Forward Rectified Current IO Typ IFSM Maximum RMS Voltage Electrical Characteristics Peak Forward Surge Current 8.3 ms single half sine-wave Parameter Min Sym .056(1.40) mW superimposed on rated load (JEDEC method) Collector-Base Breakdown Voltage Max Unit 1.0 30 10 100 115 150 120 200 56 70 105 140 80 100 150 200 .016(0.40) .008(0.20) .043(1.10) .032(0.80) -50 ----V =0) (IC=-50uA, 40 Typical ThermalIEResistance (Note 2) RΘJA Collector-Emitter Breakdown Voltage -50 ---J --V V(BR)CEO Typical Junction Capacitance (Note 1) 120in inches and (millimeters) C Dimensions (IC=-1mA, IB=0) -55 to +125 -55 to +150 Operating Temperature RangeVoltage TJ Emitter-Base Breakdown -5 ----V V(BR)EBO IC=0) Range (IE=-50uA, - 65 to +175 Storage Temperature TSTG Collector Cut-off Current Suggested Solder -----0.5 uA ICBO (VCB=-50V, IE=0) Layout FM180-MH FM1100-MH FM1150-MH FM1200-M CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MHPad Emitter Cut-off Current -----0.5 uA IEBO IC=0)Voltage at 1.0A DC (VEB=-4V, 0.9 Maximum Forward 0.92 VF 0.50 0.70 0.85 0.70 mm DC Current Gain 0.5 100 250 600 --hFE Maximum Average Reverse Current at @T A=25℃ IR (VCE=-5V, IC=-1mA) 0.90 10 Rated DC Blocking Voltage Collector-Emitter Saturation Voltage@T A=125℃ -----0.3 V VCE(sat) (IC=-10mA, IB=-1mA) 13 K¡ 7 10 1.90 R1 NOTES: Input Resistor 1- Measured at 1Frequency MHZ and applied reverse voltage of 4.0 VDC. Transition --250 --MHz fT IC=-5mA, (VCE=-10V, 2- Thermal Resistance Fromf=100MHz) Junction to Ambient V(BR)CBO *Marking: 94 0.65 0.65 2012-0 2012-06 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA114TUA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 14 40 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.