WILLAS DTA123JUA

WILLAS
FM120-M
DTA123JUA THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
SOT-323
optimize board space.
Features
• Low power loss, high efficiency.
•
0.146(3.7)
0.130(3.3)
•
•
• Terminals :Plated
terminals,
Absolute maximum
ratings
@ 25кsolderable per MIL-STD-750
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
•
•
•
0.012(0.3) Typ.
.004(0.10)MIN.
Pb-Free
package
is available
current capability, low forward voltage drop.
• High
RoHS product
for
packing
• High surge capability.code suffix ”G”
for overvoltage
• Guardring
Halogen
free product
for packingprotection.
code suffix “H”
• Ultra high-speed
Epoxy meets
UL 94 V-0switching.
flammability rating
epitaxial planar chip, metal silicon junction.
Moisure• Silicon
Sensitivity
Level 1
Lead-free
parts
meet environmental
standards
•
Built-in bias resistors
enable
the configuration
of anofinverter circuit
MIL-STD-19500 /228
without connecting
external input resistors
• RoHS product for packing code suffix "G"
The bias resistors consist of thin-film resistors with complete
Halogen free product for packing code suffix "H"
isolation to allow negative biasing of the input. They also have the
Mechanical
data
advantage of almost completely eliminating parasitic effects.
Epoxy
:
UL94-V0
rated
flame
retardant
•
Only the on/off conditions need
to be
set for operation, making
device design
Molded plastic, SOD-123H
• Case :easy
0.040(1.0)
0.024(0.6)
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
,
0.031(0.8) Typ.
.054(1.35)
.045(1.15)
Method
2026
Typ
Max
Unit
.087(2.20)
Symbol
Parameter
Min
--V
VCC
voltage
-50
.070(1.80)
Dimensions in inches
and (millimeters)
•Supply
Polarity
: Indicated by cathode band ----V
VIN
Input voltage
-12
5
• Mounting Position : Any
-100
IO
--mA
Output current
---100
IC(MAX)
• Weight : Approximated 0.011 gram
--mW
Pd
Power dissipation
--200
--ć
Tj
Junction temperature
--150
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
--150
ć
Tstg
Storage temperature
-55
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Symbol
Parameter
Min
Typ
Marking Code
VI(off)
-0.5
--Input voltage (V =-5V, I =-100­A)
Maximum Recurrent PeakCCReverseO Voltage
VRRM
----VI(on)
(VO=-0.3V, IO=-5mA)
MaximumOutput
RMS Voltage
VO(on)
voltage
=
(IO/II -5mA/-0.25mA
--- VRMS--IMaximum
=
Input
current (V
--- VDC --I
I -5V)
DC Blocking
Voltage
IO(off)
Output current (VCC=
=-50V, VI 0)
----Maximum Average Forward Rectified Current
IO --G
DC
current
gain
(V
=
I
80
I
O=-5V,
O -10mA)
R1
Input resistance
1.54
2.2
Peak Forward Surge Current 8.3 ms single half sine-wave
R2/R1
Resistance ratio
17 IFSM 21
superimposed on rated load (JEDEC method)
Transition frequency
fT
--250
(VO =-10V,
IO=5mA,(Note
f=100MHz)
Typical Thermal
Resistance
2)
RΘJA
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
.056(1.40)
.047(1.20)FM180-MH FM1100-MH FM1150-MH FM1200SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
12Max
--20
-1.1
14-0.3
20-3.6
-0.5
--2.86
26
---
Unit
13
V
30
V
21V
30mA
­A
K¡
MHz
14
40
28
40
15
50
16
60
18
80
35
42
.004(0.10)MAX.
50
60
10
100
115
150
120
200
56
70
105
140
80
100
150
200
1.0
30 .016(0.40)
.008(0.20)
40
120
Dimensions in inches and (millimeters)
-55 to +150
.043(1.10)
.032(0.80)
Electrical Characteristics
@ 25к
RATINGS
-55 to +125
- 65 to +175
TSTG
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
*Marking: 132 VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
NOTES:
0.50
Suggested Solder
Pad Layout0.85
0.5
0.70
IR
0.92
10
0.90
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.9
0.70
1.90
mm
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
DTA123JUA THRU
PNP
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
14
40
15
50
16
60
18
80
10
100
115
150
120
200
35
42
50
60
56
70
105
140
80
100
150
200
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.