WILLAS FM120-M+ DTA143EE THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Features • Low power loss, high efficiency. optimize board space. SOT-523 0.146(3.7) 0.130(3.3) current capability, low forward voltage drop. • High Pb-Free package is available • High surge capability. RoHS• product for packing code suffix ”G” Guardring for overvoltage protection. Halogen free productswitching. for packing code suffix “H” high-speed • Ultra Epoxy• meets 94 V-0 flammability Silicon UL epitaxial planar chip, metalrating silicon junction. Moisure Sensitivity Level parts meet1environmental standards of • Lead-free MIL-STD-19500 /228 the configuration of an inverter circuit Built-in bias resistors enable product external for packinginput code resistors suffix "G" • RoHS without connecting Halogen free product for packing code suffix "H"with complete The bias resistors consist of thin-film resistors Mechanical data isolation to allow negative biasing of the input. They also have the advantage of :almost completely UL94-V0 rated flameeliminating retardant parasitic effects. • Epoxy Only the on/off conditions need to be set for operation, making • Case : Molded plastic, SOD-123H device design easy , • Terminals :Plated terminals, solderable per MIL-STD-750 • • 0.071(1.8) 0.056(1.4) .067(1.70) .059(1.50) .035(0.90) .028(0.70) • • • 0.012(0.3) Typ. 0.040(1.0) 0.024(0.6) .014(0.35) 0.031(0.8) Typ. .010(0.25) 0.031(0.8) Typ. .043(1.10) .035(0.90) Method 2026 Polarity : Indicated by@ cathode Absolute•maximum ratings 25к band Dimensions in inches and (millimeters) : Any • Mounting Position Parameter Supply voltage • Weight : Approximated 0.011 gram .004(0.10)MIN. Symbol Min Typ Max Unit VCC ---50 --V VIN Input voltage -30 --10 V -100 IO Output MAXIMUM current -----CHARACTERISTICS mA RATINGS AND ELECTRICAL IC(MAX) -100 Pd --- specified. 150 --mW Ratings atPower 25℃ dissipation ambient temperature unless otherwise Tj Junction --ć Single phase half temperature wave, 60Hz, resistive of inductive--load. 150 Tstg Storage temperature -55 --150 ć For capacitive load, derate current by 20% .069(1.75) .057(1.45) • RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M 14 40 15 50 16 60 Maximum RMS Voltage Parameter VRMS Typ 14 Max 21Unit 28 Symbol Min VMaximum -0.5VDC --- 20 --- 30 V Input voltageVoltage (VCC=-5V, IO=-100A) I(off) DC Blocking 40 ----V VI(on) (VO=-0.3V, IO=-20mA) -3.0 Average Forward Rectified Current VMaximum Output voltage = (IO/II -10mA/-0.5mA --- IO ---0.3 V O(on) II = Input current (VI -5V) --- ---1.8 mA Peak Forward Surge Current 8.3 ms single half sine-wave A IO(off) Output current (VCC= =-50V, VI 0) ---IFSM ---0.5 superimposed on rated load (JEDEC method) GI DC current gain (VO=-5V, = IO -10mA) 30 ----Typical Thermal Resistance (Note 2) RΘJA 4.7 R1 Input resistance 3.29 6.11 K¡ RTypical Resistance ratio (Note 1) 0.8 CJ 1.0 1.2 2/R1 Junction Capacitance Transition frequency -55 to +125 Operating Temperature Range fT --- TJ 250 --MHz (Vo=-10V, Io=5mA, f=100MHz) Storage Temperature Range TSTG 35 42 50 60 Maximum Recurrent Peak Reverse Electrical Characteristics @Voltage 25к VRRM 12 20 13 30 CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 10 100 80 100 .008(0.20) 56 70 .004(0.10) 115 150 120 200 105 140 150 200 1.0 30 .004(0.10)MAX. 40 120 -55 to +150 .014(0.35) - 65 to +175 .006(0.15) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH F 43 *Marking: 13 Vor Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 18 80 .035(0.90) .028(0.70) Marking Code @T A=125℃ IR 0.50 0.9 0.70 0.85 Dimensions in inches and (millimeters) 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA143EE THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Features INPUT VOLTAGE -3 -1 -0.3 OFF Characteristics -10 VCC=-5V SOD-123H -3 0.146(3.7) 0.130(3.3) (mA) VI(ON) -10 VO=-0.3V better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. T =25℃ a silicon junction. • Silicon epitaxial planar chip, metal standards of • Lead-free parts meet environmental Ta=100 ℃ MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.012(0.3) Typ. -1 I0 (V) -30 ON Characteristics • Batch process design, excellent power dissipation offers OUTPUT CURRENT -100 Typical Characteristics Package outline Ta=100℃ -0.3 0.071(1.8) 0.056(1.4) Ta=25℃ -0.1 -0.03 Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant -0.1 -0.1 -10 -100 -30 : Molded -1plastic, -3SOD-123H • Case-0.3 OUTPUT CURRENT I (mA) , • Terminals :Plated terminals, solderable per MIL-STD-750 -0.01 -0.0 -0.4 0.031(0.8) Typ. -0.8 -1.2 INPUT VOLTAGE O -1.6 VI(OFF) (V) -2.0 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band GI —— IO 1000 • Mounting Position : Any • Weight : Approximated 0.011 gram 300 Dimensions in inches and (millimeters) IO/II=20 Marking Code Ta=25℃ 10 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage 3 VDC 20 Maximum Average Forward Rectified Current IO -100 IFSM Peak -1 8.3 ms-3single half -10sine-wave -0.3 Current -30 Surge OUTPUT CURRENT superimposed on rated load (JEDEC method) IO (mA) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range C TJ 12 O —— VR VO(ON) 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 -1 1.0 -10 30 -3 -55 to +125 (mA) -55 to +150 P —— Ta D - 65 to +175 400 -100 -30 IO 40 120 350 (mW) (pF) @T A=125℃ PD IR POWER DISSIPATION CO OUTPUT CAPACITANCE 10 100 30 NOTES:6 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 18 80 OUTPUT CURRENT VF Maximum Average Reverse Current at @T A=25℃ 8 Rated DC Blocking Voltage Ta=25℃ 16 60 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC 15 50 21-30 -200 Ta=25℃ CHARACTERISTICS 14 40 -10 TSTG f=1MHz 10 Ta=100℃ -100 13 30 RΘJA Typical Thermal Resistance (Note 2) Storage Temperature Range -300 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 12 20 1 -0.1 Forward OUTPUT VOLTAGE GI RATINGS (mV) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 30 IO VO=-5V Ratings at 25℃ ambient temperature unless otherwise specified. 100 Single phase half wave, 60Hz, resistive of inductive load. =100℃ by 20% For capacitive load, derate Tcurrent a DC CURRENT GAIN VO(ON) —— -1000 2- Thermal Resistance From Junction to Ambient 4 300 0.50 0.70 0.9 0.85 0.92 0.5 10 250 200 DTA143EE 150 100 2 50 0 0 -0 -4 -8 REVERSE VOLTAGE 2012-06 2012-0 -12 VR -16 (V) -20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.