WILLAS FM120-M+ DTA143ZCATHRU PNP Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Features • Low power loss, high efficiency. • • Epoxy meetsepitaxial UL 94 planar V-0 flammability ratingjunction. chip, metal silicon • Silicon parts Level meet environmental standards of • Lead-free Moisure Sensitivity 1 Built-inMIL-STD-19500 bias resistors /228 enable the configuration of an inverter circuit product forexternal packing code "G" • RoHS without connecting inputsuffix resistors Halogen free product for packing code suffix "H" The bias resistors consist of thin-film resistors with complete Mechanical data isolation to allow negative biasing of the input. They also have the advantage almost completely eliminating parasitic effects. rated flame retardant • Epoxyof: UL94-V0 Only•the on/off conditions need to be set for operation, making Case : Molded plastic, SOD-123H device design easy , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. .122(3.10) .106(2.70) 0.071(1.8) 0.056(1.4) .080(2.04) .070(1.78) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .006(0.15)MIN. • • • SOT-23 .063(1.60) .047(1.20) • 0.146(3.7) 0.130(3.3) current capability, low forward voltage drop. • Highpackage Pb-Free is available • High surge capability. RoHS productfor forovervoltage packing code suffix ”G” protection. • Guardring high-speed switching. • Ultrafree Halogen product for packing code suffix “H” Absolute maximum ratings Method 2026@ 25к .110(2.80) For capacitive load, derate current by 20% Electrical Characteristics RATINGS @ 25к .008(0.20) .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Symbol Parameter Min Typ12 Max 13 Unit 14 Marking Code 15 16 18 10 115 120 VI(off) -0.5 ----V Input voltage (VCC=-5V, IO=-100A) 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM ----V VI(on) (VO=-0.3V, IO=-5mA) -1.3 .004(0.10)MAX. 35 42 56 70 105 140 Maximum RMS Voltage V--RMS VO(on) Output voltage = (IO/II -5mA/-0.25mA --- 14 -0.3 21 V 28 II = Input current (VI -5V) ----- 20 -1.8 30 mA 40 Maximum DC Blocking Voltage 50 60 80 100 150 200 VDC A IO(off) Output current (VCC= =-50V, VI 0) -----0.5 Maximum Average Forward Rectified Current IO 1.0 GI DC current gain (VO=-5V, = IO -10mA) 80 ----.020(0.50) R1 Input resistance 3.29 4.7 6.11 K¡ Peak Forward Surge Current 8.3 ms single half sine-wave .012(0.30) FSM 30 I R2/R1 Resistance ratio 8.0 10 12 superimposed on rated load (JEDEC method) Transition frequency fT --250 --- MHz 40 in inches and (millimeters) (VO=-10V, IO=5mA, f=100MHz) Typical Thermal Resistance (Note 2) RΘJA Dimensions 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ .055(1.40) .035(0.89) .083(2.10) Symbol • Polarity : Indicated Parameter Min Typ Max Unit Dimensions in inches and (millimeters) by cathode band VCC Supply voltage ---50 --V Position : Any VIN • Mounting Input voltage -30 --5.0 V -100 IO • Weight : Approximated 0.011 gram Output current ----mA IC(MAX) -100 Pd Power dissipation --200 --mW MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Tj Junction temperature --150 --ć Ratings at 25℃ ambient temperature unless otherwise specified. Tstg Storage temperature -55 --150 ć Single phase half wave, 60Hz, resistive of inductive load. Storage Temperature Range Suggested Solder - 65 to +175 Pad Layout TSTG CHARACTERISTICS .031 .800 FM180-MH FM1100-MH FM1150-MH FM1200-MH *Marking: SYMBOL E13 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 .035 0.85 0.9 0.92 0.5 .900 10 .079 2.000 m inches mm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient .037 .950 .037 .950 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA143ZCATHRU PNP Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Typical Characteristics Features design, excellent power dissipation offers • Batch processON Characteristics INPUT VOLTAGE VI(ON) -10 -3 -1 -3 (mA) (V) -30 Mechanical data -0.3 OFF Characteristics SOD-123H -10 VCC=-5V 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Ta=100 ℃ -1 IO better reverse leakage current and thermal resistance. =-0.3V O order to • Low profile surface mounted applicationVin optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of =25℃ MIL-STD-19500Ta/228 • RoHS product for packing code suffix "G" Halogen free product Tfor packing code suffix "H" =100 ℃ a OUTPUT CURRENT -100 0.071(1.8) 0.056(1.4) -0.3 Ta=25℃ -0.1 -0.03 • Epoxy : UL94-V0 rated flame retardant -0.1 • Case-0.3: Molded-1 plastic,-3 SOD-123H -0.1 -10 -100 -30 , • Terminals :Plated terminals, per MIL-STD-750 OUTPUT CURRENT I solderable (mA) 0.040(1.0) 0.024(0.6) -0.01 -0.2 0.031(0.8) Typ. -0.4 O -0.6 -0.8 INPUT VOLTAGE VI(OFF) -1.0 0.031(0.8) -1.2 Typ. (V) Method 2026 • Polarity : Indicated by cathode band GI —— IO : Any • Mounting Position • Weight : Approximated 0.011 gram 1000 Dimensions in inches and (millimeters) VO(ON) —— IO -1000 VO=-5V IO/II=20 -300 VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM 10 3 Peak Forward Surge Current 8.3 ms single half sine-wave 1 -1 -0.3 -3 superimposed on rated load (JEDEC method) OUTPUT CURRENT -10 IO Typical Thermal Resistance (Note 2) -30 (mA) 35 42 56 70 105 140 60 80 100 150 200 -0.3 1.0 -3 30 -1 OUTPUT CURRENT 40 120 TSTG 400 f=1MHz Ta=25℃ PD -30 -10 IO (mA) -100 -55 to +150 —— Ta - 65 to +175 350 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH (pF) @T A=125℃ (mW) VF Maximum Average Reverse Current at @T A=25℃ CO 120 200 50 -55 to +125 OUTPUT CAPACITANCE 115 150 28 TJ Rated8 DC Blocking Voltage 18Ta=25℃ 10 80 100 40 -30 Operating Temperature Range CO —— Storage Temperature Range 12 CHARACTERISTICS 16 60 30 CJ VR 15 50 21 Typical Junction Capacitance (Note 1) 10 IR NOTES: 6 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 14 40 RΘJA Maximum Forward Voltage at 1.0A DC 13 30 -10 -0.1 -100 PD V0 -100 FM140-MH FM150-MH FM160-MH SYMBOL FM120-MH FM130-MH Ta=100℃ FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage -0.1 OUTPUT VOLTAGE RATINGS 30 Marking Code POWER DISSIPATION DC CURRENT GAIN GI (mV) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 300 Ratings at 25℃ ambientTtemperature unless otherwise specified. =100℃ a 100 phase half wave, 60Hz, resistive of inductive load. Single Ta=25 For capacitive load, derate current by℃20% 2- Thermal Resistance From Junction to Ambient 4 0.50 0.70 0.92 10 250 200 0.9 0.85 0.5 300 DTA143ZCA 150 100 2 50 0 -0 2012-06 2012-0 -4 -8 -12 REVERSE BIAS VOLTAGE -16 VR (V) -20 0 0 25 50 75 100 AMBIENT TEMPERATURE 125 150 T (℃) ELECTRONIC CORP WILLAS a WILLAS ELECTRONIC CORP.