WILLAS DTA144EE

WILLAS
FM120-M+
DTA144EE THRU
PNP
Digital
Transistor
FM1200-M+
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
for overvoltage
protection.
• Guardring
package
is available
• Pb-Free
Ultra high-speed switching.
•
RoHS product for packing code suffix ”G”
• Silicon epitaxial planar chip, metal silicon junction.
Halogen
free product
for environmental
packing codestandards
suffix “H”
parts meet
of
• Lead-free
• Epoxy MIL-STD-19500
meets UL 94 V-0
/228flammability rating
product for
packing
• RoHS
• Moisure
Sensitivity
Level
1 code suffix "G"
free product
for packing
code suffix "H"of an inverter circuit
• Built-inHalogen
bias resistors
enable
the configuration
without
connecting external
Mechanical
datainput resistors
• The bias
resistors
consist
thin-film
resistors with complete
: UL94-V0
ratedofflame
retardant
• Epoxy
isolation to allow negative biasing of the input. They also have the
: Molded plastic, SOD-123H
• Caseof
advantage
almost completely eliminating parasitic effects.
,
Terminals
:Plated terminals,
solderable
per
MIL-STD-750
• Only •the
on/off conditions
need to
be set for
operation,
making
Method 2026
device design easy
• Polarity : Indicated by cathode band
Position : Any
• Mounting
Absolute
maximum
ratings @ 25к
Symbol • Weight : Approximated
Parameter0.011 gram
Min
Typ
Max
Unit
0.146(3.7)
0.130(3.3)
Features
0.071(1.8)
0.056(1.4)
.035(0.90)
.028(0.70)
.067(1.70)
.059(1.50)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.014(0.35)
.010(0.25)
.043(1.10)
.035(0.90)
.004(0.10)MIN.
Dimensions in inches and (millimeters)
VCC
Supply voltage
---50
--V
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
VIN
Input voltage
-40
--10
V
-30
IO
Ratings
at Output
25℃ ambient
current temperature unless otherwise
--- specified. --mA
IC(MAX)
-100
Single
phase
halfdissipation
wave, 60Hz, resistive of inductive load.
Pd
Power
--150
--mW
For
load,temperature
derate current by 20%
Tj capacitive
Junction
--150
--ć
Tstg
Storage temperature
-55
--150
ć
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
Symbol
Parameter
Maximum
DCInput
Blocking
Voltage
VI(off)
voltage
(VCC=-5V, IO=-100­A)
VI(on)
IO=-2mA)
O=-0.3V,Current
Maximum
Average Forward(VRectified
VO(on)
Output voltage
=
(IO/II -10mA/-0.5mA
=
Input
I -5V)
PeakII Forward
Surgecurrent
Current(V
8.3
ms single half sine-wave
IO(off)
Output
current (VCC=
=-50V,
V 0)
superimposed
on rated load (JEDEC
method)I
GI
DC current gain (VO=-5V,
=
IO -5mA)
Typical
Resistance
R Thermal
Input
resistance(Note 2)
VRMS
Min
VDC
-0.5
--IO
----IFSM
--68
RΘJA
32.9
Electrical Characteristics @ 25к
1
Typical
Capacitance
R2/R1 Junction
Resistance
ratio (Note 1)
Transition frequency
Operating Temperature
Range
fT
(VO =-10V,
IO=5mA, f=100MHz)
Storage Temperature
Range
CJ
0.8
TJ
---
TSTG
12
20
14
Typ
--- 20
----------47
1.0
250
13
30
14
40
21
28
Max
Unit
--- 30
V 40
V
-3.0
-0.3
V
-0.18
mA
­A
-0.5
-- 61.1
K¡
1.2
-55 to +125
--MHz
15
50
16
60
35
42
50
60
1.0
30
115
150
120
200
56
70
105
140
150
200
.008(0.20)
80
100
.004(0.10)
120
-55 to +150
.006(0.15)
0.85
0.9
- 65 to +175
.014(0.35)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
10
100
40
.004(0.10)MAX.
CHARACTERISTICS
18
80
.035(0.90)
.028(0.70)
Marking Code
SOT-523
.069(1.75)
.057(1.45)
0.012(0.3) Typ.
*Marking: 16
IR
@T A=125℃
0.50
0.70
0.92
0.5
Dimensions in inches and (millimeters)
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA144EE THRU
PNP
Digital
Transistor
FM1200-M+
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
IO
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.