WILLAS FM120-M+ DTA144EUA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Features • Low power loss, high efficiency. SOT-323 optimize board space. • 0.040(1.0) 0.024(0.6) .010(0.25) .003(0.08) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Typ Max Unit -50 --V VIN Input voltage --10 V -30 IO Output MAXIMUM current -----CHARACTERISTICS mA RATINGS AND ELECTRICAL IC(MAX) -100 Pd --- specified. 200 --mW Ratings atPower 25℃ dissipation ambient temperature unless otherwise Tj Junction --ć Single phase half temperature wave, 60Hz, resistive of inductive--load. 150 TFor Storage temperature -55 --150 ć stg capacitive load, derate current by 20% Min ---40 RATINGS Marking Code Electrical Characteristics @ 25к 12 13 14 Storage Temperature Range .056(1.40) FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH .047(1.20) 20 30 40 Maximum Recurrent Peak Reverse Voltage VRRM Max Symbol Parameter Min Typ Unit 28 Maximum RMS VRMS --- 14 --- 21 V V -0.5 Input Voltage voltage (VCC=-5V, IO=-100A) I(off) ---VDC --- 20 -3.0 30 V V (VO=-0.3V, IO=-2mA) I(on) Maximum DC Blocking Voltage 40 VO(on) Output voltage = (IO/II -10mA/-0.5mA -----0.3 V Maximum Average Forward Current II = Input current (VI Rectified -5V) --- IO ---0.18 mA A IO(off) Output current (VCC= =-50V, VI 0) --- ---0.5 Peak Forward Surge Current 8.3 ms single half sine-wave GI DC current gain (VO=-5V, = IO -5mA) 68IFSM ----superimposed on resistance rated load (JEDEC method) R1 Input 32.9 47 61.1 K¡ Thermal Resistance RΘJA 1.0 RTypical Resistance ratio (Note 2) 0.8 1.2 2/R1 Transition frequency Typical Junction Capacitance (Note 1) fT --- CJ 250 --MHz (VO =-10V, IO=5mA, f=100MHz) -55 to +125 Operating Temperature Range TJ 15 50 16 60 18 80 10 100 115 150 120 200 35 42 56 70 105 140 150 200 50 .004(0.10)MAX. 60 80 100 1.0 30 .016(0.40) .008(0.20) 40 CHARACTERISTICS - 65 to +175 Suggested FM180-MH Solder FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ *Marking: @T A=125℃ 120 Dimensions in inches (millimeters) -55and to +150 TSTG Rated DC Blocking Voltage .087(2.20) .070(1.80) Dimensions in inches and (millimeters) .054(1.35) .045(1.15) : Indicated by cathode Absolute• Polarity maximum ratings @ 25кband : Any Symbol • Mounting Position Parameter VCC Supply voltage • Weight : Approximated 0.011 gram 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) • .004(0.10)MIN. • • • 0.012(0.3) Typ. .043(1.10) .032(0.80) • 0.146(3.7) 0.130(3.3) current capability, low forward voltage drop. • High Pb-Free package is available • High surge capability. RoHS• product for packing code suffix ”G” Guardring for overvoltage protection. high-speed • Ultra Halogen free productswitching. for packing code suffix “H” Epoxy• meets UL 94 V-0 flammability Silicon epitaxial planar chip, metalrating silicon junction. Moisure Sensitivity Level parts meet 1environmental standards of • Lead-free /228 the configuration of an inverter circuit Built-in MIL-STD-19500 bias resistors enable RoHS product for packing code suffix "G" • without connecting external input resistors Halogen free product for packing code suffix "H"with complete The bias resistors consist of thin-film resistors Mechanical data isolation to allow negative biasing of the input. They also have the advantage of :almost completely UL94-V0 rated flameeliminating retardant parasitic effects. • Epoxy Only the on/off conditions need to be set for operation, making • Case : Molded plastic, SOD-123H device design easy , • Terminals :Plated terminals, solderable per MIL-STD-750 0.50 Pad Layout 0.85 0.70 0.9 0.70 0.5 16IR 0.92 10 0.90 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 1.90 mm 2- Thermal Resistance From Junction to Ambient 0.65 0.65 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA144EUA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.