WILLAS FM120-M+ DTC123JCA THRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. Planar Die Construction • Epitaxial high-speed switching. • Ultra NPN planar Typeschip, Available • Complementary metal silicon junction. • Silicon epitaxial • Built-In Biasing Resistors • Lead-free parts meet environmental standards of • Pb-Free package is available MIL-STD-19500 /228 RoHS product for packing code suffix "G" • RoHS product for packing code suffix ”G” Halogen free product for packing code suffix "H" Halogen free product for packing code suffix “H” Mechanical data • Epoxy meets UL 94 V-0 flammability rating : UL94-V0 rated • Epoxy • Moisure Sensitivity Level 1 flame retardant • Case : Molded plastic, SOD-123H , Terminals :Plated terminals, solderable per MIL-STD-750 Absolute• maximum ratings @ 25к 0.146(3.7) 0.130(3.3) .063(1.60) .047(1.20) Features 0.071(1.8) 0.056(1.4) .080(2.04) .070(1.78) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .006(0.15)MIN. 0.031(0.8) Typ. 0.012(0.3) Typ. .122(3.10) .106(2.70) .110(2.80) Single phase half wave, 60Hz, resistive of inductive load. Electrical Characteristics @ 25 20% For capacitive load, derate current by к Symbol Parameter .008(0.20) .003(0.08) Min Typ Max Unit SYMBOL---FM120-MH 0.5 Input voltage RATINGS (VCC=5V, IO=100A) VI(off) --- FM130-MH V FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH --1.1 VMarking =0.3V, I =5mA) (V --I(on) O O Code 12 13 V 14 15 16 18 10 115 120 VMaximum Output voltage (I =5mA,I =0.25mA) --0.1 0.3 O(on) O i 20 30 V 40 50 60 80 100 150 200 Recurrent Peak Reverse Voltage VRRM .004(0.10)MAX. II Input current (VI=5V) ----3.6 mA 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS IO(off) Output current (VCC=50V, VI=0) ----0.5 A Maximum DC Voltage 40 50 60 80 100 150 200 GI DC Blocking current gain (VO=5V, IO=10mA) 80VDC --- 20 --- 30 R Input resistance 1.54 2.2 2.86 K 1 ¡ Maximum Average Forward Rectified Current IO 1.0 .020(0.50) R2/R1 Resistance ratio 17 21 26 .012(0.30) Transition frequency Peak Forward Surge Current 8.3 ms single half sine-wave fT ---IFSM 250 --MHz 30 (VO=10V, IO=5mA, f=100MHz) .055(1.40) .035(0.89) .083(2.10) Method 2026 Symbol Parameter Min Typ Max Unit VCC Supply voltage 50 --V Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band --VIN Input voltage -5 --+12 V Position : Any • Mounting Pd Power dissipation --200 --mW Tj Junction temperature --150 --• Weight : Approximated 0.011 gram ć Tstg Storage temperature -55 --150 ć IO 100 RATINGS AND ELECTRICAL CHARACTERISTICS Output MAXIMUM current mA IC(MAX) 100 Ratings at 25℃ ambient temperature unless otherwise specified. superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range Dimensions 40 in inches and (millimeters) 120 -55 to +150 -55 to +125 - 65 to +175 Solder Suggested Pad Layout *Marking:TSTG E42 CHARACTERISTICS FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH .031 VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.9 0.85 .800 0.92 0.5 .035 .900 10 .079 2.000 NOTES: inches mm 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient .037 .950 .037 .950 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC123JCA THRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Features 100 Typical Characteristics Package outline ON Characteristics OFF Characteristics • Batch process design, excellent power dissipation offers 10 better reverse leakage current and thermal VOresistance. =0.3V optimize board space. INPUT VOLTAGE a 1 • 0.3 MIL-STD-19500 /228 Ta=100℃ RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 3 (mA) 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1 I0 VI(ON) (V) • Low power loss, high efficiency. • High current capability, low forward voltage drop. 10 • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. 3 • Silicon epitaxial planar chip, metal silicon junction. standards of • Lead-free parts meet environmental T =25℃ OUTPUT CURRENT 30 VCC=5V SOD-123H • Low profile surface mounted application in order to 0.071(1.8) 0.056(1.4) Ta=100℃ 0.3 Ta=25℃ 0.1 0.03 Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 1 10 100 30 3 : Molded plastic, SOD-123H • Case 0.3 , OUTPUT CURRENT I (mA) • Terminals :Plated terminals, solderable per MIL-STD-750 0.1 0.1 0.01 0.2 0.4 0.031(0.8) Typ. 0.6 INPUT VOLTAGE O 0.8 VI(OFF) 1.0 0.031(0.8) Typ. (V) Method 2026 • Polarity : Indicated by cathode VO(ON) —— IOband 1000 • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) GI —— IO 1000 IO/II=20 VO=5V 300 100 RATINGS Maximum Recurrent Peak Reverse Voltage Ta=25℃ VRRM 12 20 VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM 30 Maximum RMS Voltage 10 1 10 half sine-wave 30 3 Peak Forward Surge Current 8.3 ms single OUTPUT CURRENT superimposed on rated load (JEDEC method) IO (mA) Storage Temperature Range GI 30 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 0.3 1.0 3 30 1 -55 to +125 PD 10 IO 30 100 (mA) 40 120 —— Ta -55 to +150 - 65 to +175 400 350 (mW) IR @T A=125℃ PD (pF) 16 60 OUTPUT CURRENT VF CO OUTPUT CAPACITANCE 15 50 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 6 3 1 0.1 Ta=25℃ Maximum Forward Voltage at 1.0A DC NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 21 TSTG f=1MHz CHARACTERISTICS 14 40 10 TJ 30 100 CJ VR 10 8 Ta=25℃ 13 30 RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Operating Temperature RangeCO —— 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Ta=100℃ Marking Code Ta=100℃ POWER DISSIPATION OUTPUT VOLTAGE VO(ON) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% DC CURRENT GAIN (mV) 300 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 4 2- Thermal Resistance From Junction to Ambient 2 0.50 0.70 300 0.92 0.5 10 250 200 0.9 0.85 DTC123JCA 150 100 50 0 0 2012-06 2012-0 4 8 12 REVERSE BIAS VOLTAGE 16 VR (V) 20 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.