WILLAS FM120-M+ DTC143TUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Features • Low power loss, high efficiency. x x 0.146(3.7) 0.130(3.3) Built-in bias resistors enable MIL-STD-19500 /228 the configuration of an inverter circuit without connecting external input resistors for packing code suffix "G"(see equivalent circuit) • RoHS product Halogen free productofforthin-film packing code suffix "H" The bias resistors consist resistors with complete isolationMechanical to allow negativedata biasing of the input. They also have the advantage of almost completely eliminating parasitic effects : UL94-V0 rated flame retardant • Epoxy Only the on/off conditions need to be set for operation, making : Molded plastic, SOD-123H • Case easy device design , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) • • x SOT-323 Pb-Free• High package is available current capability, low forward voltage drop. capability.code suffix ”G” • High surge RoHS product for packing Guardring for overvoltage protection. • Halogen free product for packing code suffix “H” • Ultra high-speed switching. Epoxy meets ULepitaxial 94 V-0planar flammability rating chip, metal silicon junction. • Silicon Moisure• Sensitivity Level 1 Lead-free parts meet environmental standards of .004(0.10)MIN. • 0.040(1.0) 0.024(0.6) .010(0.25) .003(0.08) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 .087(2.20) Dimensions in inches and (millimeters) Unit Collector-Emitter Voltage VCEO 50 MAXIMUM RATINGS AND ELECTRICAL Emitter-Base voltage VEBO 5 Collector Ratings Current-Continuous 100specified. at 25℃ ambient temperatureICunless otherwise V V CHARACTERISTICS V mA Collector Single Dissipation PC of inductive load. 200 phase half wave, 60Hz, resistive For capacitive load, derate current byT20% Junction J Temperature Storage Temperature Range RATINGS TSTG Marking Code Maximum Recurrent Peak Reverse Voltage Sym Parameter mW к 150 .056(1.40) к -55~150 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH .047(1.20) 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 VRRM Maximum RMS Voltage Electrical Characteristics Maximum DC Blocking Voltage .070(1.80) .054(1.35) .045(1.15) • Polarity Ratings : Indicated by cathode band Absolute Maximum • Mounting Position : Any Parameter Symbol Value Collector-Base Voltage VCBO gram 50 • Weight : Approximated 0.011 Min VRMS 14 21 28 35 VDC 20 30 40 50 60 .004(0.10)MAX. 1.0 Typ Max Unit 42 56 70 105 140 80 100 150 200 .043(1.10) .032(0.80) Maximum Average Forward Rectified Current IO Collector-Base Breakdown Voltage 50 --V V(BR)CBO -- (IC=50uA, IE=0) Peak Collector-Emitter Forward Surge Current 8.3 ms single half sine-wave Breakdown Voltage FSM 30 I 50 ----V V(BR)CEO superimposed rated load (JEDEC method) IB=0) (IC=1mA,on .016(0.40) Emitter-Base Breakdown Voltage V 40 Typical Thermal Resistance (Note 2) RΘJA 5 ----V(BR)EBO (IE=50uA, IC=0) .008(0.20) 120 Typical Junction Capacitance (Note 1) C J Collector Cut-off Current ----0.5 -55 to uA+125 ICBO -55 to +150 IE=0) Range (VCB=50V, Operating Temperature TJ Dimensions in inches and (millimeters) Emitter Cut-off Current 65 to +175 Storage Temperature Range TSTG IEBO ----0.5 uA (VEB=4V, IC=0) DC Current Gain 100 SYMBOL 300 FM120-MH 600 FM130-MH --- FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH hFE CHARACTERISTICS (VCE=5V, IC=1mA) 0.9 Collector-Emitter Saturation Maximum Forward Voltage at 1.0AVoltage DC 0.92 VF 0.50 0.70 0.85 ----0.3 V VCE(sat) ( IC=5mA,IB=0.25mA ) Suggested Solder 0.5 Maximum Average Reverse Current at @T A=25℃ IR4.7 K¡ R1 Input resistance 3.29 6.11 Pad 10 Layout @T A=125℃ Rated DC Blocking Voltage Transition Frequency --250 --MHz fT 0.70 (VCE =10V, I E =5mA, f=100MHz) NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.90 2- Thermal Marking: 03 Resistance From Junction to Ambient 1.90 mm 0.65 0.65 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC143TUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Typical Characteristics DC CURRENT GAIN : hFE • MIL-STD-19500 /228 Ta=100°C 100 RoHS product for packing code25°C suffix "G" −40°C 50 Halogen free product for packing code suffix "H" Mechanical data 20 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. 1k for overvoltage protection. • Guardring VCE=5V switching. • Ultra high-speed 500 • Silicon epitaxial planar chip, metal silicon junction. 200 parts meet environmental standards of • Lead-free : UL94-V0 rated flame retardant • Epoxy 10 plastic, SOD-123H • Case : Molded 5 , • Terminals :Plated terminals, solderable per MIL-STD-750 2 Method 2026 1 200µ 500µby1mcathode 2m 5mband 10m 20m Polarity 100µ : Indicated 0.146(3.7) 0.130(3.3) 1 0.012(0.3) Typ. lC/lB=20 0.071(1.8) 0.056(1.4) 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 0.040(1.0) 0.024(0.6) 10m 5m 0.031(0.8) Typ. 0.031(0.8) Typ. 2m 1m 50m 100m 100µ 200µ 500µ 1m 2m 5m 10m in20m 50m 100m Dimensions inches and (millimeters) • COLLECTOR CURRENT : I C (A) COLLECTOR CURRENT : I C (A) • Mounting Position : Any Fig.1 DC0.011 current Fig.2 Collector-emitter saturation • Weight : Approximated gramgain vs. collector current voltage vs. collector current MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 14 40 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.