WILLAS FM120-M+ THRU SCS751CS-40T5G 30mA1.0A Surface Mount Schottky Barrier Rectifiers - 40V -20V- 200V FM1200-M SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SOD-923 SOD-123+ Package PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to zApplications optimize board space. • Low power loss, high efficiency. Low current rectification • High current capability, low forward voltage drop. • High surge capability. zFeatures • Guardring for overvoltage protection. switching. • Ultra high-speed Extremelysmall surface mounting type. (SOD-923) • Silicon epitaxial planar chip, metal silicon junction. Low VF • Lead-free parts meet environmental standards of HighMIL-STD-19500 reliability. /228 RoHS product packing code suffix "G" • We declare thatforthe material of product Halogen free product for packing code suffix "H" compliance with RoHS requirements. 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 1 0.056(1.4) 2 SOD-923 Mechanical data Pb-Free package is available RoHS product for packing ”G” flamesuffix retardant • Epoxy : UL94-V0 rated code Halogen product for packing code suffix “H” : Molded plastic, SOD-123H • Casefree 0.040(1.0) 0.024(0.6) • Terminals :Plated terminals, solderable per MIL-STD-750 z Construction Method 2026 Silicon epitaxial planar • Polarity : Indicated by cathode band 0.031(0.8) Typ. , 0.031(0.8) Typ. 2 Anode 1 Cathode Dimensions in inches and (millimeters) • Mounting Position : Any • Weight : Approximated 0.011 gram DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SCS751CS-40T5G 5 8000/Tape&Reel Reverse voltage (repetitive peak) RATINGS Reverse voltage (DC) Marking Code Average rectified forward current Maximum Recurrent Peak Reverse Voltage Forward current surge peak （60Hz・1cyc） Maximum RMS Voltage Junction temperature Maximum DC Blocking Voltage Storage temperature IO Peak Forward Surge Current 8.3 ms single half sine-wave Parameter Symbol IFSM Min. Maximum Average Forward Rectified Current Limits Unit VRM 40 V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH VR 30 V 12 13 14 15 16 30 Io mA 20 30 40 50 60 VRRM IFSM 200 mA 14 21 28 35 42 VRMS 125 Tj ℃ 20 30 40 50 60 VDC -40 to +125 Tstg ℃ superimposed on rated load (JEDEC method) Forward voltage Reverse current Typical Junction Capacitance (Note 1) Capacitance between Operating Temperature Rangeterminals Typical Thermal Resistance (Note 2) VF IR RΘJA Ct TJ CJ Storage Temperature Range Typ. - Unit V µA 2-55 to +125 - - 18 80 10 100 115 150 120 200 56 70 105 140 80 100 150 200 IF=1mA 40 VR=30V 120 V R=1V , f=1MHz-55 to +150 pF - 65 to +175 TSTG O Electricalcharacteristiccurves(Ta=25 C) FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH CHARACTERISTICS SYMBOL VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ 0.1 0.003 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) REVERSE POW ER DISSIPATION:PR (W) NOTES: 0.002 0.50 IR @T A=125℃ Rated DC Blocking Voltage t 2- Thermal Resistance D=1/2 From Junction DC to Ambient DC 0.001 Sin(θ＝180) T VR D=t/T VR=20V Tj=125℃ 0.04 D=1/2 0.02 0A 0V 0.08 0.06 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2012-06 2012-11 40 0.9 0.92 10 Io t T DC VR D=t/T VR=20V Tj=125℃ D=1/2 0.04 0.02 Sin(θ＝180) 0 0.85 0.5 Io 0A 0V 0.08 0.70 0.1 1- Measured at 1 MHZ and applied reverse voltage of0.064.0 VDC. Max. 0.37 0.5 FM180-MH FM1100-MH FM1150-MH FM1200-MH 1.0 30Conditions zElectrical characteristic (Ta=25°C) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Ratings at 25℃ ambient temperature unless otherwise specified. zAbsolute maximum ratings (Ta=25°C) Single phase half wave, 60Hz, resistive of inductive load. Parameter Symbol For capacitive load, derate current by 20% Sin(θ＝180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 125 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M THRU SCS751CS-40T5G 30mA Surface Mount Schottky Barrier Rectifiers - 40V FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-923 Package SOD-123+ PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space.curves zElectrical characteristic Ta=25℃ Ta=-25℃ 800 600 500 400 VRRM 30 Maximum DC15Blocking Voltage RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) Maximum RMS Voltage 1cyc Ifsm 8.3ms Maximum Average Forward Rectified Current 10 Peak Forward Surge Current 8.3 ms single half sine-wave AVE:3.40A superimposed on rated load (JEDEC method) 5 Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) 0 VRMS 25 VDC AVE:111.0nA 0.040(1.0) 0.024(0.6) Dimensions in inches andf=1MHz (millimeters) 8 VR=0V n=10pcs 7 6 5 4 2 AVE:1.81pF 0 12 20 13 30 14 40 14 21Ta=25℃ 28 IF=0.5A 30IR=1A Irr=0.25*IR n=10pcs 20 40 15 IFSM 10 RΘJA 5 CJ 0 Storage Temperature Range IFSM DISRESION MAP TSTG TJ AVE:11.7ns -55 to +125 15 50 10 16 60 35 42 50 60 8 CHARACTERISTICS 6 4 40 120 2 0 1 trr DISPERSION MAP TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) VF Maximum Average Reverse CurrentIfsm at @T A=25℃ 8 Rated DC Blocking Voltage t NOTES: 10 100 115 150 120 200 56 70 105 140 80 100 150 200 8.3ms 8.3ms 1cyc -55 to +150 100 10 NUMBER CYCLES - 65 toOF+175 IFSM-CYCLE CHARACTERISTICS 100 2 0 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.70 Mounted on epoxy board IF=100mA IM=10mA 1ms 0.9 0.85 0.5 0.04 Rth(j-c) 1- Measured at 14 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.05 0.50 Rth(j-a) IR @T A=125℃ 6 1 18 80 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M 1000 Maximum Forward Voltage at 1.0A DC FORWARD POWER DISSIPATION:Pf(W) 10 Ifsm 1.0 30 PEAK SURGE FORWARD CURRENT:IFSM(A) 30 0.031(0.8) Typ. 1 IO 20 Operating Temperature Range 2012-11 25 IR DISPERSION MAP Ct DISPERSION MAP FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH Maximum Recurrent Peak Reverse Voltage 20 2012-06 20 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 300 3 VF DISPERSION MAP RATINGS 15 Ta=25℃ 9 700 Marking Code 10 10 200 specified. 290 Ratings at 25℃ ambient temperature unless otherwise 100 AVE:304.2mV Single phase half wave, 60Hz, resistive of inductive load. 0 280 For capacitive load, derate current by 20% 5 0.031(0.8) Typ. CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD VOLTAGE:VF(mV) • Polarity : Indicated by 320 • Mounting Position : Any 310 • Weight : Approximated 0.011 gram 300 0 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ VR=30V n=30pcs 900 REVERSE CURRENT:IR(nA) Ta=25℃ cathode IF=1mAband n=30pcs 1 40 1000 Method 2026 0.071(1.8) 0.056(1.4) 0.1 1 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 35 rated flame retardant • Epoxy 0: UL94-V0 FORWARD VOLTAGE：VF(mV) REVERSE VOLTAGE：VR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS plastic, SOD-123H • Case : Molded , • Terminals :Plated terminals, solderable per MIL-STD-750 330 CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz Ta=75℃ 0.1 100 MIL-STD-19500 /228 RoHS product for packing code suffix "G" 0.01 Halogen free product for packing code suffix10"H" Mechanical data 0.001 0.012(0.3) Typ. 10 Ta=125℃ PEAK SURGE FORWARD CURRENT:IFSM(A) • 0.146(3.7) 0.130(3.3) 0REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) • Low power loss, high efficiency. drop. • High100current capability, low forward voltage 100000 • High surge capability. forTa=75℃ overvoltage protection. 10000 • Guardring 10 Ta=125℃ switching. • Ultra high-speed 1 epitaxial planar Ta=25℃ 1000 junction. chip, metal silicon • Silicon standards of • Lead-free parts meet environmental Ta=-25℃ 0.92 10 0.03 D=1/2 Sin(θ＝180) 0.02 DC 0.01 time 300us 10 0.001 0 0.1 TIME:t(ms) 10 Rth-t CHARACTERISTICS 1000 0 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.05 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SCS751CS-40T5G 30mA1.0A Surface Mount Schottky Barrier Rectifiers - 40V -20V- 200V FM1200-M+ SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SOD-923 SOD-123+ Package PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. .006(0.15) .010(0.25) • Low power loss, high efficiency. • High current capability, low forward voltage drop.SOD -923 • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet. 0environmental 3 0 ( 0 . 7 5 ) standards of MIL-STD-19500 /228 .033(0.85) • RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .022(0.55) .026(0.65) Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .017(0.43) Dimensions in inches and (millimeters) .003(0.07) .007(0.17) .012(0.30) .013(0.34) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .037(0.95) Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 80 100 150 200 .041(1.05) 30 40 50 60 V Dimensions in20inches and (millimeters) I 1.0 Maximum DC Blocking Voltage DC Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) O 40 120 -55 to +125 TJ Operating Temperature Range CHARACTERISTICS 1.1 0.45 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL 0.043 FM120-MH FM130-MH FM140-MH VF Maximum Forward Voltage at 1.0A DC - 65 to +175 TSTG -55 to +150 SOLDERING FOOTPRINT* Storage Temperature Range Maximum Average Reverse Current at @T A=25℃ @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. CJ Typical Junction Capacitance (Note 1) Rated DC Blocking Voltage 30 RΘJA Typical Thermal Resistance (Note 2) IFSM 0.0177 0.50 0.70 0.85 0.9 0.92 0.5 IR 10 0.50 0.0197 SCALE 10:1 mm Ǔ ǒinches 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.