RoHS 1SS400 FEATURES 1SS400 High Speed SWITCHING Diodes Small surface mounting type High Speed High reliability with high surge current handing capability O IC C D T ,. L O N Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ R T Parameter Symbol Peak reverse voltage Mean rectifying current E J E Storage temperature 90 V VR 80 V IFM 225 mA IO 100 mA Isurge 500 mA Tj 125 ℃ Tstg -55~+125 ℃ C E L Peak forward current Junction temperature Unit VRM DC reverse voltage Surge current (1s) Limits Electrical Ratings @TA=25℃ Parameter Symbol W Min. Typ. Max. Unit Conditions Forward voltage VF 1.2 V IF=100mA Reverse current IR 0.1 μA VR=80V Capacitance between terminals CT 3.0 pF VR=0.5V,f=1MHZ Reverse recovery time trr 4 ns VR=6V,IF=10mA,RL=100Ω WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS 1SS400 D T ,. L REVERSE CURRENT : IR (A) 1m 100m 10m 1m 100µ 10µ 0 Ta = 125 °C Ta= 75° C Ta= 25°C Ta= −25° C FORWARD CURRENT : IF (A) 1 0.2 0.4 0.6 0.8 1.0 1.2 0.1m Ta=125°C 10µ 1µ Ta=75°C 100n Ta=25°C 10n 1n 0 1.4 20 40 60 80 100 120 10 5 2 1 0.5 0.2 0.1 0 2 4 6 O 8 C 10 12 14 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals IC 100 3 VR=6V Irr=1/10IR SURGE CURRENT : Isurge (A) REVERSE RECOVERY TIME : trr (ns) CAPACITANCE BETWEEN TERMINALS : CT (pF) !Electrical characteristic curves (Ta = 25°C) 2 1 0 0 10 20 PULSE Single pulse 50 20 10 5 R T 2 1 0.1 30 1 FORWARD CURRENT : IF (mA) 10 O 100 1 000 N 10 000 PULSE WIDTH : Tw (ms) Fig.4 Reverse recovery time characteristics Fig.5 Surge current characteristics C E L 0.01µF D.U.T. 5kΩ PULSE GENERATOR OUTPUT 50Ω J E E 50Ω SAMPLING OSCILLOSCOPE Fig.6 Reverse recovery time (trr) measurement circuit W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]