RoHS 2N4403 2N4403 TRANSISTOR (PNP) D T ,. L TO—92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : -0.6 A Collector-base voltage V(BR)CBO : -40 V 1.EMILTTER 2.BASE Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter C 3. COLLECTOR N O 1 2 3 unless otherwise specified) O Symbol conditions MIN Ic=-100µA , IE=0 -40 V V(BR)CEO IC= -1mA , IB=0 -40 V V(BR)EBO IE=-100µA, IC=0 -5 V ICBO VCB=-35 V, IE=0 -0.1 µA ICEO VCE=-35 V, IB=0 -0.1 µA IEBO VEB=-4V, IC=0 -0.1 µA hFE(1) VCE=-2 V, IC=- 150mA Collector-emitter saturation voltage VCE(sat) IC=-150 mA, IB=-15mA -0.4 V Base-emitter saturation voltage VBE(sat) IC= -150 mA, IB=-15mA -0.95 V R T Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage C E L Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain J E E W Transition frequency WEJ ELECTRONIC CO. Test 100 MAX UNIT 300 VCE= -10V, IC= -20mA fT 200 f = 100MHz Http:// www.wej.cn E-mail:[email protected] MHz