D. RoHS 2N7002 CO .,L T 2N7002 MOSFET (N-Channel) SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability 1. GATE 2. SOURCE 3. DRAIN Marking: 7002 Parameter Value Drain-Source voltage 60 ID Drain Current PD Power Dissipation RӨJA Thermal Resistance, junction to Ambient TJ Junction Temperature Tstg Storage Temperature V 115 mA 225 mW 556 ℃/W 150 ℃ RO VDS Units NI Symbol C MAXIMUM RATINGS (TA=25℃ unless otherwise noted) -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT VGS=0 V, ID=10 μA 60 Vth(GS) VDS=VGS, ID=250 μA 1 lGSS VDS=0 V, VGS=±25 V Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V On-state Drain Current ID(ON) VGS=10 V, VDS=7 V 500 VGS=10 V, ID=500mA 1 7.5 VGS=5 V, ID=50mA 1 7.5 VDS=10 V, ID=200mA 80 500 ms VGS=10V, ID=500mA 0.5 3.75 V VGS=5V, ID=50mA 0.05 0.375 V IS=115mA, VGS=0 V 0.55 1.2 V Gate-Threshold Voltage EL E Gate-body Leakage V(BR)DSS CT Drain-Source Breakdown Voltage Drain-Source On-Resistance rDS(0n) Forward Trans conductance gfs Drain-source on-voltage VDS(on) VSD Input Capacitance Ciss EJ Diode Forward Voltage Output Capacitance COSS Reverse Transfer Capacitance CrSS 2.5 V ±80 nA 80 nA mA Ω 50 VDS=25V, VGS=0V, f=1MHz 25 pF 5 SWITCHING TIME td(on) Turn-off Time td(off) W Turn-on Time WEJ ELECTRONIC CO. VDD=25 V, RL=50Ω ID=500mA,VGEN=10 V RG=25 Ω Http:// www.wej.cn 20 40 E-mail:[email protected] ns D. RoHS CO .,L T 2N7002 W EJ EL E CT RO NI C Typical characteristics WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]