RoHS 2SA1235A D T ,. L SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.2 W (Tamb=25℃) 0. 95¡ À0. 025 PCM : 1. 02 Power dissipation TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Symbol Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current E Emitter cut-off current J E 1. 60¡ À0. 05 N conditions MIN Ic= -100 µA, IE=0 -60 V V(BR)CEO Ic= -0.1 mA, IB=0 -50 V V(BR)EBO IE= -100µA, IC=0 -6 V ICBO VCB=-60 V , IE=0 -0.1 µA IEBO VEB= -6V , -0.1 µA V(BR)CBO C E L Collector-emitter breakdown voltage O IC O 2. 80¡ À0. 05 unless otherwise specified) R T Parameter C 1. 9 Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range 2. 92¡ À0. 05 TRANSISTOR (PNP) 0. 35 2SA1235A Test IC=0 MAX UNIT hFE(1) VCE=-6V, IC= -1mA 150 hFE(2) VCE=-6V, IC= -0.1mA 90 VCE(sat) IC=-100 mA, IB= -10mA -0.3 V Base-emitter voltage VBE(sat) IC= -100mA, IB= -10mA -1 V Transition frequency fT VCE=-6V, IC= -10mA DC current gain Collector-emitter saturation voltage W 500 180 CLASSIFICATION OF hFE(1) Marking Range WEJ ELECTRONIC CO. M·E M·F 150-300 250-500 Http:// www.wej.cn E-mail:[email protected] MHz